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Title: Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering

Abstract

X-ray diffractions, Nomarski microscopy, scanning electron microscopy, and photoluminescence have been used to study the effects of substrate on the structure and orientation of ZnO thin films grown by rf-magnetron sputtering. GaAs(001), GaAs(111), Al{sub 2}O{sub 3}(0002) (c-plane), and Al{sub 2}O{sub 3}(1102) (r-plane) wafers have been selected as substrates in this study. X-ray diffractions reveal that the ZnO film grown on GaAs(001) substrate is purely textured with a high c-axis orientation while that grown on GaAs(111) substrate is a single ZnO(0002) crystal; a polycrystalline structure with a large-single-crystal area of ZnO(0002) is obtained on a c-plane Al{sub 2}O{sub 3} substrate while a ZnO(1120) single crystal is formed on an r-plane Al{sub 2}O{sub 3} substrate. There is absence of significant difference between the photoluminescence spectra collected from ZnO/GaAs(001), ZnO/GaAs(111), and ZnO/Al{sub 2}O{sub 3}(0002), while the photoluminescence from ZnO/Al{sub 2}O{sub 3}(1102) shows a reduced intensity together with an increased linewidth, which is, likely, due to the increased incorporation of native defects during the growth of ZnO(1120)

Authors:
; ; ; ;  [1];  [2];  [2]
  1. Institute of Materials Research and Engineering (IMRE), 3 Research Link, Singapore 117602 (Singapore)
  2. (Singapore)
Publication Date:
OSTI Identifier:
21064404
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 102; Journal Issue: 8; Other Information: DOI: 10.1063/1.2798868; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CRYSTAL GROWTH; ETCHING; GALLIUM ARSENIDES; MONOCRYSTALS; PHOTOLUMINESCENCE; POLYCRYSTALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Liu, H. F., Chua, S. J., Hu, G. X., Gong, H., Xiang, N., Department of Materials Science and Engineering, National University of Singapore, Singapore 119260, and Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576. Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering. United States: N. p., 2007. Web. doi:10.1063/1.2798868.
Liu, H. F., Chua, S. J., Hu, G. X., Gong, H., Xiang, N., Department of Materials Science and Engineering, National University of Singapore, Singapore 119260, & Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576. Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering. United States. doi:10.1063/1.2798868.
Liu, H. F., Chua, S. J., Hu, G. X., Gong, H., Xiang, N., Department of Materials Science and Engineering, National University of Singapore, Singapore 119260, and Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576. Mon . "Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering". United States. doi:10.1063/1.2798868.
@article{osti_21064404,
title = {Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering},
author = {Liu, H. F. and Chua, S. J. and Hu, G. X. and Gong, H. and Xiang, N. and Department of Materials Science and Engineering, National University of Singapore, Singapore 119260 and Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576},
abstractNote = {X-ray diffractions, Nomarski microscopy, scanning electron microscopy, and photoluminescence have been used to study the effects of substrate on the structure and orientation of ZnO thin films grown by rf-magnetron sputtering. GaAs(001), GaAs(111), Al{sub 2}O{sub 3}(0002) (c-plane), and Al{sub 2}O{sub 3}(1102) (r-plane) wafers have been selected as substrates in this study. X-ray diffractions reveal that the ZnO film grown on GaAs(001) substrate is purely textured with a high c-axis orientation while that grown on GaAs(111) substrate is a single ZnO(0002) crystal; a polycrystalline structure with a large-single-crystal area of ZnO(0002) is obtained on a c-plane Al{sub 2}O{sub 3} substrate while a ZnO(1120) single crystal is formed on an r-plane Al{sub 2}O{sub 3} substrate. There is absence of significant difference between the photoluminescence spectra collected from ZnO/GaAs(001), ZnO/GaAs(111), and ZnO/Al{sub 2}O{sub 3}(0002), while the photoluminescence from ZnO/Al{sub 2}O{sub 3}(1102) shows a reduced intensity together with an increased linewidth, which is, likely, due to the increased incorporation of native defects during the growth of ZnO(1120)},
doi = {10.1063/1.2798868},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 8,
volume = 102,
place = {United States},
year = {2007},
month = {10}
}