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Title: Deposition of single-crystal Ti{sub 2}AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target

Abstract

Single-crystal Ti{sub 2}AlN (0001) thin films were grown on (111) oriented MgO substrates kept at 830 deg. C by ultrahigh vacuum dc reactive magnetron sputtering from a compound 2Ti:Al target in a mixed Ar/N{sub 2} discharge. The effects of variations in the nitrogen partial pressure on the phase composition of the films were studied. Results from transmission electron microscopy, x-ray diffraction, and elastic recoil detection analysis show a narrow region for growth of Ti{sub 2}AlN MAX phase with respect to the nitrogen content in the discharge. Perovskite Ti{sub 3}AlN and intermetallic Ti{sub 3}Al and TiAl phases dominate at nitrogen depletion. For overstoichiometric deposition conditions with respect to Ti{sub 2}AlN, a phase mixture with NaCl-structured TiN is obtained. Epitaxial growth is observed with a layer-by-layer mode on the 0001 basal planes for all phases. A superstructure in the TiN phase is also observed along [111] with the repetition distance of 7.34 A ring , most likely related to Al segregation. Nanoindentation shows that the film hardness increases from 11 to 27 GPa with increasing nitrogen content and corresponding phase transformations from Ti-Al intermetallics to Ti{sub 3}AlN, Ti{sub 2}AlN, and TiN.

Authors:
; ; ;  [1]
  1. Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, S-581 83 Linkoeping (Sweden)
Publication Date:
OSTI Identifier:
21062146
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 102; Journal Issue: 7; Other Information: DOI: 10.1063/1.2785958; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CRYSTAL GROWTH; DEPOSITION; EPITAXY; HARDNESS; INTERMETALLIC COMPOUNDS; MAGNESIUM OXIDES; MONOCRYSTALS; NITROGEN; PARTIAL PRESSURE; PEROVSKITE; PHASE TRANSFORMATIONS; PRESSURE RANGE GIGA PA; SODIUM CHLORIDES; SPUTTERING; THIN FILMS; TITANIUM NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Joelsson, T, Flink, A, Birch, J, and Hultman, L. Deposition of single-crystal Ti{sub 2}AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target. United States: N. p., 2007. Web. doi:10.1063/1.2785958.
Joelsson, T, Flink, A, Birch, J, & Hultman, L. Deposition of single-crystal Ti{sub 2}AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target. United States. doi:10.1063/1.2785958.
Joelsson, T, Flink, A, Birch, J, and Hultman, L. Mon . "Deposition of single-crystal Ti{sub 2}AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target". United States. doi:10.1063/1.2785958.
@article{osti_21062146,
title = {Deposition of single-crystal Ti{sub 2}AlN thin films by reactive magnetron sputtering from a 2Ti:Al compound target},
author = {Joelsson, T and Flink, A and Birch, J and Hultman, L},
abstractNote = {Single-crystal Ti{sub 2}AlN (0001) thin films were grown on (111) oriented MgO substrates kept at 830 deg. C by ultrahigh vacuum dc reactive magnetron sputtering from a compound 2Ti:Al target in a mixed Ar/N{sub 2} discharge. The effects of variations in the nitrogen partial pressure on the phase composition of the films were studied. Results from transmission electron microscopy, x-ray diffraction, and elastic recoil detection analysis show a narrow region for growth of Ti{sub 2}AlN MAX phase with respect to the nitrogen content in the discharge. Perovskite Ti{sub 3}AlN and intermetallic Ti{sub 3}Al and TiAl phases dominate at nitrogen depletion. For overstoichiometric deposition conditions with respect to Ti{sub 2}AlN, a phase mixture with NaCl-structured TiN is obtained. Epitaxial growth is observed with a layer-by-layer mode on the 0001 basal planes for all phases. A superstructure in the TiN phase is also observed along [111] with the repetition distance of 7.34 A ring , most likely related to Al segregation. Nanoindentation shows that the film hardness increases from 11 to 27 GPa with increasing nitrogen content and corresponding phase transformations from Ti-Al intermetallics to Ti{sub 3}AlN, Ti{sub 2}AlN, and TiN.},
doi = {10.1063/1.2785958},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 7,
volume = 102,
place = {United States},
year = {2007},
month = {10}
}