Oxide thickness dependence of swift heavy ion-induced surface tracks formation in silicon dioxide on silicon structures at grazing incidence
- IES, UMR-CNRS 5214, cc082, Universite Montpellier 2, 34095 Montpellier cedex 5 (France)
The influence of the oxide thickness in the surface tracks formation in thin silicon dioxide layered-silicon substrate (SiO{sub 2}-Si) irradiated with swift heavy ion is dealt with. In this respect, SiO{sub 2}-Si samples with different oxide thicknesses have been characterized using atomic force microscopy before and after 7.51 MeV/u Xe ion irradiation at a grazing incident angle of 1 deg. relative to the surface plane. Experimental evidence of the existence of a threshold thickness in the formation of swift heavy ion-induced surface tracks has been addressed and discussed according to the thermal spike theory. This experimental upshot can be helpful when assessing metal-oxide-semiconductor ultrathin-gate oxide reliability issues and for growth of silicon-based nanostructures.
- OSTI ID:
- 21057559
- Journal Information:
- Journal of Applied Physics, Vol. 102, Issue 12; Other Information: DOI: 10.1063/1.2826708; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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