skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures

Abstract

Self-assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on n{sup +}-GaAs substrates, capped between 0.4 {mu}m thick n-type GaAs layers with electron concentration of 1x10{sup 16} cm{sup -3}. The effect of rapid thermal annealing at 700 deg. C for 60 s on the noise properties of the structure has been investigated using Au/n-GaAs Schottky diodes as test devices. In the reference sample without containing QDs, the noise spectra show a generation-recombination (g-r) noise behavior due to a discrete energy level located about 0.51 eV below the conduction band edge. This trap is ascribed to the M4 (or EL3) trap in GaAs MBE layers, related to a chemical impurity-native defect complex. In the structure with embedded QDs, the observed g-r noise spectra are due to a midgap trap level ascribed to the EL2 trap in GaAs, which is related to the InAs QDs dissolution due to the thermal treatment.

Authors:
; ; ; ; ; ;  [1]
  1. Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)
Publication Date:
OSTI Identifier:
21057538
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 102; Journal Issue: 5; Other Information: DOI: 10.1063/1.2775536; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL GROWTH; GALLIUM ARSENIDES; IMPURITIES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; RECOMBINATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SUBSTRATES

Citation Formats

Arpatzanis, N, Tsormpatzoglou, A, Dimitriadis, C A, Song, J D, Choi, W J, Lee, J I, Charitidis, C, Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791, and School of Chemical Engineering, National Technical University of Athens, 115780 Athens. Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures. United States: N. p., 2007. Web. doi:10.1063/1.2775536.
Arpatzanis, N, Tsormpatzoglou, A, Dimitriadis, C A, Song, J D, Choi, W J, Lee, J I, Charitidis, C, Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791, & School of Chemical Engineering, National Technical University of Athens, 115780 Athens. Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures. United States. doi:10.1063/1.2775536.
Arpatzanis, N, Tsormpatzoglou, A, Dimitriadis, C A, Song, J D, Choi, W J, Lee, J I, Charitidis, C, Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791, and School of Chemical Engineering, National Technical University of Athens, 115780 Athens. Sat . "Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures". United States. doi:10.1063/1.2775536.
@article{osti_21057538,
title = {Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures},
author = {Arpatzanis, N and Tsormpatzoglou, A and Dimitriadis, C A and Song, J D and Choi, W J and Lee, J I and Charitidis, C and Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791 and School of Chemical Engineering, National Technical University of Athens, 115780 Athens},
abstractNote = {Self-assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on n{sup +}-GaAs substrates, capped between 0.4 {mu}m thick n-type GaAs layers with electron concentration of 1x10{sup 16} cm{sup -3}. The effect of rapid thermal annealing at 700 deg. C for 60 s on the noise properties of the structure has been investigated using Au/n-GaAs Schottky diodes as test devices. In the reference sample without containing QDs, the noise spectra show a generation-recombination (g-r) noise behavior due to a discrete energy level located about 0.51 eV below the conduction band edge. This trap is ascribed to the M4 (or EL3) trap in GaAs MBE layers, related to a chemical impurity-native defect complex. In the structure with embedded QDs, the observed g-r noise spectra are due to a midgap trap level ascribed to the EL2 trap in GaAs, which is related to the InAs QDs dissolution due to the thermal treatment.},
doi = {10.1063/1.2775536},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 102,
place = {United States},
year = {2007},
month = {9}
}