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Title: Optical Properties Of {beta}-FeSi2 Thin Films Grown By Magnetron Sputtering

Abstract

{beta}-FeSi2 semiconductor thin films have been grown on Si(100) and Si(111) substrate at room temperature by unbalanced magnetron sputtering. The thicknesses of {beta}-FeSi2 thin films have been prepared to have value between 0.3-1{mu}m. Optical characteristic of the {beta}-FeSi2 films have been deduced using Fourier Transform Infrared Spectroscopy (FT-IR) in the wavelength range 1000-2000nm. The {beta}-FeSi2 films have been determinated to have optical direct band gap from the plot of ({alpha}h{upsilon})2 vs. h{upsilon} The direct band gap values of the films have been observed to vary between 0.82-0.89 eV depending on the type of substrates.

Authors:
;  [1]
  1. Faculty of Arts and Sciences, Department of physics, Yildiz Technical University, Davutpasa 34220, Istanbul (Turkey)
Publication Date:
OSTI Identifier:
21057240
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 899; Journal Issue: 1; Conference: 6. international conference of the Balkan Physical Union, Istanbul (Turkey), 22-26 Aug 2006; Other Information: DOI: 10.1063/1.2733402; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ENERGY GAP; EV RANGE; FOURIER TRANSFORMATION; INFRARED SPECTRA; IRON SILICIDES; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SILICON ALLOYS; SPUTTERING; SUBSTRATES; THIN FILMS

Citation Formats

Tatar, B., and Kutlu, K.. Optical Properties Of {beta}-FeSi2 Thin Films Grown By Magnetron Sputtering. United States: N. p., 2007. Web. doi:10.1063/1.2733402.
Tatar, B., & Kutlu, K.. Optical Properties Of {beta}-FeSi2 Thin Films Grown By Magnetron Sputtering. United States. doi:10.1063/1.2733402.
Tatar, B., and Kutlu, K.. Mon . "Optical Properties Of {beta}-FeSi2 Thin Films Grown By Magnetron Sputtering". United States. doi:10.1063/1.2733402.
@article{osti_21057240,
title = {Optical Properties Of {beta}-FeSi2 Thin Films Grown By Magnetron Sputtering},
author = {Tatar, B. and Kutlu, K.},
abstractNote = {{beta}-FeSi2 semiconductor thin films have been grown on Si(100) and Si(111) substrate at room temperature by unbalanced magnetron sputtering. The thicknesses of {beta}-FeSi2 thin films have been prepared to have value between 0.3-1{mu}m. Optical characteristic of the {beta}-FeSi2 films have been deduced using Fourier Transform Infrared Spectroscopy (FT-IR) in the wavelength range 1000-2000nm. The {beta}-FeSi2 films have been determinated to have optical direct band gap from the plot of ({alpha}h{upsilon})2 vs. h{upsilon} The direct band gap values of the films have been observed to vary between 0.82-0.89 eV depending on the type of substrates.},
doi = {10.1063/1.2733402},
journal = {AIP Conference Proceedings},
number = 1,
volume = 899,
place = {United States},
year = {Mon Apr 23 00:00:00 EDT 2007},
month = {Mon Apr 23 00:00:00 EDT 2007}
}
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