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Title: Analysis of Substructure Parameters in Different Texture Components and Structure-Formation in Magnetron Sputtered TiN Coatings

Abstract

The substructure parameters in the main texture components and structure-formation process during the growth of 500nm and 4000nm reactive CFUBMS TiN deposits as a function of the continuous target current (DC)

Authors:
;  [1];  [2];  [3];  [4]
  1. Department of Solid State Physics and Microelectronics, Faculty of Physics, University of Sofia, 5 blvd. James Bouchier, 1164 Sofia (Bulgaria)
  2. Institute for Nuclear Research and Nuclear Energy, 72 Tzarigradsko Chaussee, BG-1784 Sofia (Bulgaria)
  3. Surface Engineering Group, Department of Chemistry and Materials, Manchester Metropolitan University, Manchester M15GD (United Kingdom)
  4. Semiconductor Physics and Technology Laboratory, Faculty of Physics, University of Sofia, Galichitsa 33A, 1126 Sofia (Bulgaria)
Publication Date:
OSTI Identifier:
21057226
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 899; Journal Issue: 1; Conference: 6. international conference of the Balkan Physical Union, Istanbul (Turkey), 22-26 Aug 2006; Other Information: DOI: 10.1063/1.2733373; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COATINGS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC CURRENTS; SPUTTERING; SURFACE COATING; SURFACES; TEXTURE; TITANIUM NITRIDES

Citation Formats

Iordanova, I., Mirchev, R., Antonov, V., Kelly, P. J., and Varblianska, K.. Analysis of Substructure Parameters in Different Texture Components and Structure-Formation in Magnetron Sputtered TiN Coatings. United States: N. p., 2007. Web. doi:10.1063/1.2733373.
Iordanova, I., Mirchev, R., Antonov, V., Kelly, P. J., & Varblianska, K.. Analysis of Substructure Parameters in Different Texture Components and Structure-Formation in Magnetron Sputtered TiN Coatings. United States. doi:10.1063/1.2733373.
Iordanova, I., Mirchev, R., Antonov, V., Kelly, P. J., and Varblianska, K.. Mon . "Analysis of Substructure Parameters in Different Texture Components and Structure-Formation in Magnetron Sputtered TiN Coatings". United States. doi:10.1063/1.2733373.
@article{osti_21057226,
title = {Analysis of Substructure Parameters in Different Texture Components and Structure-Formation in Magnetron Sputtered TiN Coatings},
author = {Iordanova, I. and Mirchev, R. and Antonov, V. and Kelly, P. J. and Varblianska, K.},
abstractNote = {The substructure parameters in the main texture components and structure-formation process during the growth of 500nm and 4000nm reactive CFUBMS TiN deposits as a function of the continuous target current (DC)},
doi = {10.1063/1.2733373},
journal = {AIP Conference Proceedings},
number = 1,
volume = 899,
place = {United States},
year = {Mon Apr 23 00:00:00 EDT 2007},
month = {Mon Apr 23 00:00:00 EDT 2007}
}
  • The development of crystallographic texture and residual macro-stresses during the growth from 500 nm to 4000 nm of TiN films applied by reactive Closed Field Unbalanced Magnetron Sputtering (CFUBMS) on M2 tool steel at three direct target currents (Id) (namely 4, 6 and 8A) have been analyzed via X-ray diffraction.
  • AlN films were deposited on microscopy glass slide and silicon (111 orientation) substrates by reactive ac magnetron sputtering using two nitrogen concentrations and three discharge powers of 1.5, 2.5, and 5.0 kW. X-ray diffraction studies showed that films prepared on glass and Si substrates were of hexagonal wurtizite phase. Films on Si substrates also contained small amounts of the cubic phase of AlN besides the predominantly hexagonal wurtizite phase. AlN coatings on glass substrates were textured towards the (00{center_dot}2) plane; this preferred orientation of crystals was found to decrease with increase in sputtering power. Scanning electron microscopy studies showed thatmore » AlN films prepared at higher nitrogen concentration have a microstructure consisting of pebblelike crystals, some of which were hexagonal in shape. The crystal size in the coatings increased with sputtering power and was in the range of 70-230 nm.« less
  • Nanocrystalline zirconia thin films have been deposited at ambient temperature by dc magnetron sputtering on glass and quartz substrates. The crystallite size as calculated from the x-ray diffraction patterns in the films varies between 10 and 25 nm and is dependent on oxygen percentage in the sputtering gas. Interestingly, the presence of monoclinic and cubic phase is observed for the films deposited on glass at 40%, 60%, and 80% of oxygen in the sputtering gas, while those deposited on quartz showed only the monoclinic phase. Refractive index decreased with increase in percentage of oxygen in the sputter gas. Significantly, evenmore » at 100% oxygen in the sputtering gas, films of thickness of the order of 500 nm have been grown starting from the metallic Zr target. The dielectric constants were measured using the extended cavity perturbation technique at X-band frequency (8-12 GHz). The dielectric constant and loss tangent showed a very small decrease with increase in frequency but exhibited a stronger dependence on processing parameters. The dielectric constants of the films at microwave frequencies ranged between 12.16 and 22.3.« less
  • Solar cells based on dc magnetron sputtered indium tin oxide onto epitaxially grown films of p-InP have been fabricated and analyzed. The best cells had a global efficiency of 18.4% and an air mass zero (AMO) efficiency of 16.0%. The principal fabrication variable considered was the constituency of the sputtering gas and both argon/hydrogen and argon/oxygen mixtures have been used. The former cells have the higher efficiencies, are apparently stable, and exhibit almost ideal junction characteristics. The latter cells are relatively unstable and exhibit much higher ideality factors and reverse saturation current densities. The temperature dependence of the reverse saturationmore » current indicates totally different charge transfer mechanisms in the two cases.« less
  • Scanning magnetron-sputtered titanium nitride (TiN) films were deposited onto silicon substrates under varying nitrogen and argon pressures. Golden TiN films with (220) orientation were deposited at different substrate bias voltages (0 to -120 V). Auger electron spectroscopy measurements show N/Ti ratio between 1.18 and 1.07, and oxygen content between 11% and 5% in the as-deposited TiN film samples. Dependence of the stress and grain size on substrate bias voltage and dependence of resistivity on bias voltage and annealing temperature have been studied for the deposited TiN films. Resistivity was found minimum for the TiN samples deposited at -40 V bias,more » which decreases from 320 to 132 {mu}{omega} cm on annealing, up to 750 deg. C. Copper was sputter deposited on the as-grown TiN films deposited at -40 V bias. The Cu/TiN/Si samples were annealed at different temperatures. Resistivity, x-ray diffraction, scanning electron microscopy, and energy dispersive x-ray analysis results of the Cu/TiN/Si structure are consistent with each other, and show that scanning magnetron sputtering deposited TiN film is a good diffusion barrier for copper metallization of the silicon devices, up to 750 deg. C.« less