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Title: Thermodynamic Analysis of the High Temperature Processes in the System Si-C-H-Cl

Abstract

In the present work a thermodynamic analysis of the interaction processes in the Si-C-H-Cl system in the temperature interval 1000-3000 K is carried out. The optimal conditions giving the maximum yield of the silicon carbide by pyrolysis of mixture of volatile compounds of carbon and silicon have been defined.

Authors:
 [1]
  1. Department of Semiconductor Physics, Faculty of Physics, University of Sofia 'St. Kliment Ohridski', 5 J. Bourchier Blvd., 1164 Sofia (Bulgaria)
Publication Date:
OSTI Identifier:
21057224
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 899; Journal Issue: 1; Conference: 6. international conference of the Balkan Physical Union, Istanbul (Turkey), 22-26 Aug 2006; Other Information: DOI: 10.1063/1.2733362; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; HYDROGEN COMPOUNDS; MIXTURES; PYROLYSIS; SILICON CARBIDES; SILICON CHLORIDES; TEMPERATURE DEPENDENCE; THERMAL ANALYSIS; THERMODYNAMICS; VOLATILITY

Citation Formats

Lilov, Stanislav. Thermodynamic Analysis of the High Temperature Processes in the System Si-C-H-Cl. United States: N. p., 2007. Web. doi:10.1063/1.2733362.
Lilov, Stanislav. Thermodynamic Analysis of the High Temperature Processes in the System Si-C-H-Cl. United States. doi:10.1063/1.2733362.
Lilov, Stanislav. Mon . "Thermodynamic Analysis of the High Temperature Processes in the System Si-C-H-Cl". United States. doi:10.1063/1.2733362.
@article{osti_21057224,
title = {Thermodynamic Analysis of the High Temperature Processes in the System Si-C-H-Cl},
author = {Lilov, Stanislav},
abstractNote = {In the present work a thermodynamic analysis of the interaction processes in the Si-C-H-Cl system in the temperature interval 1000-3000 K is carried out. The optimal conditions giving the maximum yield of the silicon carbide by pyrolysis of mixture of volatile compounds of carbon and silicon have been defined.},
doi = {10.1063/1.2733362},
journal = {AIP Conference Proceedings},
number = 1,
volume = 899,
place = {United States},
year = {Mon Apr 23 00:00:00 EDT 2007},
month = {Mon Apr 23 00:00:00 EDT 2007}
}