A Biased Anode to Suppress Ion Back-Bombardment in a DC High Voltage Photoelectron Gun

Journal Article · Wed Feb 06 00:00:00 EST 2008 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2888075· OSTI ID:21055187

Grames, J; Adderley, P; Brittian, J; Clark, J; Hansknecht, J; Machie, D; Poelker, M; Stutzman, M; Surles-Law, K ^[1]; Pozdeyev, E ^[2]

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1. Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, Virginia 23606 (United States)
2. Brookhaven National Laboratory, Upton, New York 11973-5000 (United States)

Ion back-bombardment is the dominant mechanism that limits the operating lifetime of DC high voltage GaAs photoelectron guns. In this work, an electrically isolated anode electrode was used to distinguish the QE damage contributions of ions produced within the cathode/anode gap and those produced downstream of the anode. This new anode design provides a means to suppress QE decay due to ionized gas in the beam line.

• OSTI ID: 21055187
• Journal Information: AIP Conference Proceedings, Vol. 980, Issue 1; Conference: PSTP2007: 12. international workshop on polarized ion sources, targets and polarimetry, Upton, NY (United States), 10-14 Sep 2007; Other Information: DOI: 10.1063/1.2888075; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
43 PARTICLE ACCELERATORS
ANODES
DESIGN
ELECTRIC POTENTIAL
ELECTRON GUNS
ELECTRON SOURCES
GALLIUM ARSENIDES
ION BEAMS
IONS
PHOTOCATHODES
PHOTOEMISSION
POLARIZATION
SPIN