Regimes of GaAs quantum dot self-assembly by droplet epitaxy

Journal Article · Wed Aug 15 00:00:00 EDT 2007 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.76.075317· OSTI ID:21055128

Heyn, Ch; Stemmann, A; Schramm, A; Welsch, H; Hansen, W; Nemcsics, A ^[1]

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1. Institut fuer Angewandte Physik und Zentrum fuer Mikrostrukturforschung, Jungiusstrasse 11, D-20355 Hamburg (Germany)

Two regimes are observed for the density of strain-free GaAs quantum dots (QDs) grown by Ga droplet epitaxy. QDs grown from liquid Ga droplets deposited at temperatures up to 200 deg. C exhibit densities that qualitatively agree with classical nucleation theory and are quantitatively reproduced by a rate equations based growth model under consideration of dimer break off. In contrast, at higher growth temperatures, the onset of coarsening by Ostwald ripening [Z. Phys. Chem., Stoechiom. Verwandtschaftsl. 34, 495 (1900)] causes drastically reduced QD densities. Extension of the growth models and consideration of Ostwald ripening allow the quantitative prediction of QD densities in this regime, as well.

• OSTI ID: 21055128
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 76, Issue 7; Other Information: DOI: 10.1103/PhysRevB.76.075317; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DENSITY
DROPLETS
EPITAXY
GALLIUM ARSENIDES
LIQUIDS
NUCLEATION
QUANTUM DOTS
REACTION KINETICS
RIPENING