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Title: Local Atomic Structure Of Cdse Ultra-Thin Quantum Wells Examined By X-Ray Absorption Fine Structure Experiments

Abstract

We have employed the X-ray absorption fine structure (XAFS) technique for the investigation of the local atomic structure of CdSe/ZnSe ultra-thin quantum wells (UTQWs) with 1 and 3 ML thickness. The CdSe/ZnSe system presents a large lattice mismatch of {approx}7.3 % and the pseudomorphic UTQWs are under compressive biaxial strain. The analysis of the XAFS data indicate differences in the Cd-Se bond length of the 1 and 3 ML UTQWs, as a consequence, differences in the magnitude of the strain, in significant disagreement with the usual hypothesis of thickness independent strain for pseudomorphic thin films. Furthermore, the analysis of the XAFS experiments suggests the possibility of inhomogeneous strain in the 3ML UTQW. We conclude that even for ultra-thin pseudomorphic films the strain can be inhomogeneous and depend on film thickness if this is close to the critical thickness hc.

Authors:
;  [1];  [2]
  1. Applied Physics Dept., CINVESTAV-Merida, Apdo. Postal 73., 97310, Merida, Yucatan (Mexico)
  2. Physics Department, CINVESTAV, Ave. IPN 2508, 07360 Mexico, DF (Mexico)
Publication Date:
OSTI Identifier:
21055074
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729789; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; BOND LENGTHS; CADMIUM SELENIDES; CRYSTAL DEFECTS; FINE STRUCTURE; INTERFACES; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; STRAINS; THIN FILMS; X-RAY SPECTRA; X-RAY SPECTROSCOPY; ZINC SELENIDES

Citation Formats

Lezama-Pacheco, Juan S., Mustre, Jose, and Hernandez-Calderon, Isaac. Local Atomic Structure Of Cdse Ultra-Thin Quantum Wells Examined By X-Ray Absorption Fine Structure Experiments. United States: N. p., 2007. Web. doi:10.1063/1.2729789.
Lezama-Pacheco, Juan S., Mustre, Jose, & Hernandez-Calderon, Isaac. Local Atomic Structure Of Cdse Ultra-Thin Quantum Wells Examined By X-Ray Absorption Fine Structure Experiments. United States. doi:10.1063/1.2729789.
Lezama-Pacheco, Juan S., Mustre, Jose, and Hernandez-Calderon, Isaac. Tue . "Local Atomic Structure Of Cdse Ultra-Thin Quantum Wells Examined By X-Ray Absorption Fine Structure Experiments". United States. doi:10.1063/1.2729789.
@article{osti_21055074,
title = {Local Atomic Structure Of Cdse Ultra-Thin Quantum Wells Examined By X-Ray Absorption Fine Structure Experiments},
author = {Lezama-Pacheco, Juan S. and Mustre, Jose and Hernandez-Calderon, Isaac},
abstractNote = {We have employed the X-ray absorption fine structure (XAFS) technique for the investigation of the local atomic structure of CdSe/ZnSe ultra-thin quantum wells (UTQWs) with 1 and 3 ML thickness. The CdSe/ZnSe system presents a large lattice mismatch of {approx}7.3 % and the pseudomorphic UTQWs are under compressive biaxial strain. The analysis of the XAFS data indicate differences in the Cd-Se bond length of the 1 and 3 ML UTQWs, as a consequence, differences in the magnitude of the strain, in significant disagreement with the usual hypothesis of thickness independent strain for pseudomorphic thin films. Furthermore, the analysis of the XAFS experiments suggests the possibility of inhomogeneous strain in the 3ML UTQW. We conclude that even for ultra-thin pseudomorphic films the strain can be inhomogeneous and depend on film thickness if this is close to the critical thickness hc.},
doi = {10.1063/1.2729789},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}