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Title: A Nanowire Growth Technique Utilizing Focused Ion Beams

Abstract

The impact of high energy Ga ion beams focused to diameters below 100nm on substrates such as Ge and Sb offers a new approach for the formation of nanowires. In contrast to several well-known processes for bottom-up fabrication of one-dimensional nanostructures, for this process neither additional temperature treatment nor any additional material component is needed. The resulting nanostructures are completely amorphous and show very homogeneous diameters in the range of 15 to 30nm. Lengths up to several microns can be achieved.

Authors:
; ; ;  [1];  [2];  [3]
  1. Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7, 1040 Vienna (Austria)
  2. Research Center Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, POB 510119, 01314 Dresden (Germany)
  3. Vienna University of Technology, Institute for Solid State Physics, Wiedner Hauptstrasse 8-10, 1040 Vienna (Austria)
Publication Date:
OSTI Identifier:
21055071
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729786; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY; CRYSTAL GROWTH; DEPOSITION; FABRICATION; GALLIUM IONS; GERMANIUM; GERMANIUM IONS; ION BEAMS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SUBSTRATES

Citation Formats

Schoendorfer, C., Lugstein, A., Hyun, Y. J., Bertagnolli, E., Bischoff, L., and Pongratz, P.. A Nanowire Growth Technique Utilizing Focused Ion Beams. United States: N. p., 2007. Web. doi:10.1063/1.2729786.
Schoendorfer, C., Lugstein, A., Hyun, Y. J., Bertagnolli, E., Bischoff, L., & Pongratz, P.. A Nanowire Growth Technique Utilizing Focused Ion Beams. United States. doi:10.1063/1.2729786.
Schoendorfer, C., Lugstein, A., Hyun, Y. J., Bertagnolli, E., Bischoff, L., and Pongratz, P.. Tue . "A Nanowire Growth Technique Utilizing Focused Ion Beams". United States. doi:10.1063/1.2729786.
@article{osti_21055071,
title = {A Nanowire Growth Technique Utilizing Focused Ion Beams},
author = {Schoendorfer, C. and Lugstein, A. and Hyun, Y. J. and Bertagnolli, E. and Bischoff, L. and Pongratz, P.},
abstractNote = {The impact of high energy Ga ion beams focused to diameters below 100nm on substrates such as Ge and Sb offers a new approach for the formation of nanowires. In contrast to several well-known processes for bottom-up fabrication of one-dimensional nanostructures, for this process neither additional temperature treatment nor any additional material component is needed. The resulting nanostructures are completely amorphous and show very homogeneous diameters in the range of 15 to 30nm. Lengths up to several microns can be achieved.},
doi = {10.1063/1.2729786},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}