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Title: Self-Organized Si Dots On Ge Substrates

Abstract

The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying with the substrate occurred for the highest temperatures. Carbon pre-deposition offers suitable nucleation centers for the Si island and reduction of alloying. pre-structured Ge substrates were prepared to enhance islanding and to achieve ordering.

Authors:
; ;  [1]
  1. Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz (Austria)
Publication Date:
OSTI Identifier:
21055069
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729783; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; DEPOSITION; EPITAXY; GERMANIUM; NUCLEATION; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE

Citation Formats

Pachinger, D., Lichtenberger, H., and Schaeffler, F.. Self-Organized Si Dots On Ge Substrates. United States: N. p., 2007. Web. doi:10.1063/1.2729783.
Pachinger, D., Lichtenberger, H., & Schaeffler, F.. Self-Organized Si Dots On Ge Substrates. United States. doi:10.1063/1.2729783.
Pachinger, D., Lichtenberger, H., and Schaeffler, F.. Tue . "Self-Organized Si Dots On Ge Substrates". United States. doi:10.1063/1.2729783.
@article{osti_21055069,
title = {Self-Organized Si Dots On Ge Substrates},
author = {Pachinger, D. and Lichtenberger, H. and Schaeffler, F.},
abstractNote = {The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying with the substrate occurred for the highest temperatures. Carbon pre-deposition offers suitable nucleation centers for the Si island and reduction of alloying. pre-structured Ge substrates were prepared to enhance islanding and to achieve ordering.},
doi = {10.1063/1.2729783},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}