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Title: InGaN Selfassembled Quantum Dots Investigated By X-Ray Diffraction-Anomalous-Fine Structure Technique

Abstract

Local chemical composition of InGaN quantum dots grown by molecular-beam epitaxy on GaN virtual substrates was investigated by x-ray diffraction anomalous fine-structure method. Using this approach, we found that the In content increases from 20% at the dot base to 40-50% at the top. From the detailed numerical analysis of the data we were able to reconstruct the local neighborhood of Ga atoms in different positions in the dots, as well as the local elastic relaxation state.

Authors:
 [1];  [2]; ; ; ; ;  [3];  [4]
  1. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02668 Warsaw (Poland)
  2. Charles University, Faculty of Mathematics and Physics, Ke Karlovu 5, 121 16 Prague (Czech Republic)
  3. Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen (Germany)
  4. ESRF, 6 rue Jules Horowitz, BP220, 38043 Grenoble CEDEX (France)
Publication Date:
OSTI Identifier:
21055065
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729779; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; CHEMICAL COMPOSITION; CRYSTAL GROWTH; FINE STRUCTURE; GALLIUM NITRIDES; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; NUMERICAL ANALYSIS; QUANTUM DOTS; RELAXATION; SEMICONDUCTOR MATERIALS; SUBSTRATES; X-RAY DIFFRACTION

Citation Formats

Piskorska, E., Holy, V., Siebert, M., Schmidt, T., Falta, J., Yamaguchi, T., Hommel, D., and Renevier, H. InGaN Selfassembled Quantum Dots Investigated By X-Ray Diffraction-Anomalous-Fine Structure Technique. United States: N. p., 2007. Web. doi:10.1063/1.2729779.
Piskorska, E., Holy, V., Siebert, M., Schmidt, T., Falta, J., Yamaguchi, T., Hommel, D., & Renevier, H. InGaN Selfassembled Quantum Dots Investigated By X-Ray Diffraction-Anomalous-Fine Structure Technique. United States. doi:10.1063/1.2729779.
Piskorska, E., Holy, V., Siebert, M., Schmidt, T., Falta, J., Yamaguchi, T., Hommel, D., and Renevier, H. Tue . "InGaN Selfassembled Quantum Dots Investigated By X-Ray Diffraction-Anomalous-Fine Structure Technique". United States. doi:10.1063/1.2729779.
@article{osti_21055065,
title = {InGaN Selfassembled Quantum Dots Investigated By X-Ray Diffraction-Anomalous-Fine Structure Technique},
author = {Piskorska, E. and Holy, V. and Siebert, M. and Schmidt, T. and Falta, J. and Yamaguchi, T. and Hommel, D. and Renevier, H.},
abstractNote = {Local chemical composition of InGaN quantum dots grown by molecular-beam epitaxy on GaN virtual substrates was investigated by x-ray diffraction anomalous fine-structure method. Using this approach, we found that the In content increases from 20% at the dot base to 40-50% at the top. From the detailed numerical analysis of the data we were able to reconstruct the local neighborhood of Ga atoms in different positions in the dots, as well as the local elastic relaxation state.},
doi = {10.1063/1.2729779},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}