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Title: AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE

Abstract

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Authors:
; ;  [1]
  1. Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)
Publication Date:
OSTI Identifier:
21055060
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729770; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; FABRICATION; GALLIUM ARSENIDES; INTERFACES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SUBSTRATES; TUNNEL DIODES; TUNNEL EFFECT

Citation Formats

Nishiwaki, T., Yamaguchi, M., and Sawaki, N. AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE. United States: N. p., 2007. Web. doi:10.1063/1.2729770.
Nishiwaki, T., Yamaguchi, M., & Sawaki, N. AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE. United States. doi:10.1063/1.2729770.
Nishiwaki, T., Yamaguchi, M., and Sawaki, N. Tue . "AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE". United States. doi:10.1063/1.2729770.
@article{osti_21055060,
title = {AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE},
author = {Nishiwaki, T. and Yamaguchi, M. and Sawaki, N.},
abstractNote = {An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.},
doi = {10.1063/1.2729770},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}