skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: MBE growth and characterization of MnP and Ge nanowhiskers

Abstract

Ge and MnP nanowhiskers have been grown by molecular beam epitaxy (MBE) concurrently on InP and GaAs substrates. The growth of MnP nanowhiskers appears to be caused by catalytic free growth mechanism, whereas the growth of Ge nanowhiskers is found to be amenable to vapour-liquid-solid (VLS) mechanism of growth. The measurements of temperature and magnetic field dependences of magnetization have shown that the samples containing mostly Ge nanowhiskers exhibit ferromagnetic behaviour up to room temperature.

Authors:
 [1];  [2]; ; ; ;  [1]
  1. Graduate School of Engineering, Tokyo University of Agriculture and Technology, 184-8588 Tokyo (Japan)
  2. (Russian Federation)
Publication Date:
OSTI Identifier:
21055059
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729768; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; FERROMAGNETIC MATERIALS; GALLIUM ARSENIDES; GERMANIUM; INDIUM PHOSPHIDES; MAGNETIC FIELDS; MAGNETIZATION; MANGANESE PHOSPHIDES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SOLIDS; SUBSTRATES; WHISKERS

Citation Formats

Bouravleuv, A. D., A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Minami, K., Sato, Y., Ishibashi, T., and Sato, K.. MBE growth and characterization of MnP and Ge nanowhiskers. United States: N. p., 2007. Web. doi:10.1063/1.2729768.
Bouravleuv, A. D., A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Minami, K., Sato, Y., Ishibashi, T., & Sato, K.. MBE growth and characterization of MnP and Ge nanowhiskers. United States. doi:10.1063/1.2729768.
Bouravleuv, A. D., A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Minami, K., Sato, Y., Ishibashi, T., and Sato, K.. Tue . "MBE growth and characterization of MnP and Ge nanowhiskers". United States. doi:10.1063/1.2729768.
@article{osti_21055059,
title = {MBE growth and characterization of MnP and Ge nanowhiskers},
author = {Bouravleuv, A. D. and A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg and Minami, K. and Sato, Y. and Ishibashi, T. and Sato, K.},
abstractNote = {Ge and MnP nanowhiskers have been grown by molecular beam epitaxy (MBE) concurrently on InP and GaAs substrates. The growth of MnP nanowhiskers appears to be caused by catalytic free growth mechanism, whereas the growth of Ge nanowhiskers is found to be amenable to vapour-liquid-solid (VLS) mechanism of growth. The measurements of temperature and magnetic field dependences of magnetization have shown that the samples containing mostly Ge nanowhiskers exhibit ferromagnetic behaviour up to room temperature.},
doi = {10.1063/1.2729768},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}