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Title: GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths

Abstract

We report on the latest achievements in terms of growth and optical investigation of ultrathin GaN/AlN isolated and coupled quantum wells grown by plasma-assisted molecular-beam epitaxy. We also present the observation of intraband absorption in self-organized GaN quantum dots and on the application to infrared photodetection at telecommunication wavelengths.

Authors:
; ; ; ; ;  [1]; ; ;  [2]; ;  [3]
  1. Institut d'Electronique Fondamentale, Universite Paris Sud, UMR 8622 CNRS, 91405 Orsay (France)
  2. Equipe mixte CEACNRS-UJF, DRFMC/SP2M/PSC, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble (France)
  3. Departement of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 3200 (Israel)
Publication Date:
OSTI Identifier:
21055058
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729997; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ALUMINIUM NITRIDES; DATA TRANSMISSION; DEPOSITION; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PLASMA; QUANTUM DOTS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; WAVELENGTHS

Citation Formats

Julien, Francois H., Tchernycheva, Maria, Doyennette, Laetitia, Nevou, Laurent, Lupu, Anatole, Warde, Elias, Guillot, Fabien, Monroy, Eva, Bellet-Amalric, Edith, Vardi, Alon, and Bahir, Gad. GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths. United States: N. p., 2007. Web. doi:10.1063/1.2729997.
Julien, Francois H., Tchernycheva, Maria, Doyennette, Laetitia, Nevou, Laurent, Lupu, Anatole, Warde, Elias, Guillot, Fabien, Monroy, Eva, Bellet-Amalric, Edith, Vardi, Alon, & Bahir, Gad. GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths. United States. doi:10.1063/1.2729997.
Julien, Francois H., Tchernycheva, Maria, Doyennette, Laetitia, Nevou, Laurent, Lupu, Anatole, Warde, Elias, Guillot, Fabien, Monroy, Eva, Bellet-Amalric, Edith, Vardi, Alon, and Bahir, Gad. Tue . "GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths". United States. doi:10.1063/1.2729997.
@article{osti_21055058,
title = {GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths},
author = {Julien, Francois H. and Tchernycheva, Maria and Doyennette, Laetitia and Nevou, Laurent and Lupu, Anatole and Warde, Elias and Guillot, Fabien and Monroy, Eva and Bellet-Amalric, Edith and Vardi, Alon and Bahir, Gad},
abstractNote = {We report on the latest achievements in terms of growth and optical investigation of ultrathin GaN/AlN isolated and coupled quantum wells grown by plasma-assisted molecular-beam epitaxy. We also present the observation of intraband absorption in self-organized GaN quantum dots and on the application to infrared photodetection at telecommunication wavelengths.},
doi = {10.1063/1.2729997},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}