Plasma-assisted MBE growth of nitride-based intersubband detectors

Journal Article · Tue Apr 10 00:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2729975· OSTI ID:21055057

Monroy, Eva; Guillot, Fabien; Leconte, Sylvain; Bellet-Amalric, Edith ^[1]; Baumann, Esther; Giorgetta, Fabrizio R; Hofstetter, Daniel ^[2]

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1. Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)
2. University of Neuchatel, 2000 Neuchatel (Switzerland)

In this work, we present the plasma-assisted molecular-beam epitaxy of quantum well infrared photodetector structures, including the Si-doped GaN/AlN short-period superlattice of the active region, AlGaN claddings and integration of the final device. Photovoltage measurements of complete devices reveal a narrow ({approx}90 meV) detection peak at 1.39 {mu}m at room temperature.

• OSTI ID: 21055057
• Journal Information: AIP Conference Proceedings, Vol. 893, Issue 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729975; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CLADDING
CRYSTAL GROWTH
DOPED MATERIALS
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
PHOTODETECTORS
PLASMA
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUPERLATTICES