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Title: Plasma-assisted MBE growth of nitride-based intersubband detectors

Abstract

In this work, we present the plasma-assisted molecular-beam epitaxy of quantum well infrared photodetector structures, including the Si-doped GaN/AlN short-period superlattice of the active region, AlGaN claddings and integration of the final device. Photovoltage measurements of complete devices reveal a narrow ({approx}90 meV) detection peak at 1.39 {mu}m at room temperature.

Authors:
; ; ;  [1]; ; ;  [2]
  1. Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)
  2. University of Neuchatel, 2000 Neuchatel (Switzerland)
Publication Date:
OSTI Identifier:
21055057
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729975; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CLADDING; CRYSTAL GROWTH; DOPED MATERIALS; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PLASMA; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SUPERLATTICES

Citation Formats

Monroy, Eva, Guillot, Fabien, Leconte, Sylvain, Bellet-Amalric, Edith, Baumann, Esther, Giorgetta, Fabrizio R., and Hofstetter, Daniel. Plasma-assisted MBE growth of nitride-based intersubband detectors. United States: N. p., 2007. Web. doi:10.1063/1.2729975.
Monroy, Eva, Guillot, Fabien, Leconte, Sylvain, Bellet-Amalric, Edith, Baumann, Esther, Giorgetta, Fabrizio R., & Hofstetter, Daniel. Plasma-assisted MBE growth of nitride-based intersubband detectors. United States. doi:10.1063/1.2729975.
Monroy, Eva, Guillot, Fabien, Leconte, Sylvain, Bellet-Amalric, Edith, Baumann, Esther, Giorgetta, Fabrizio R., and Hofstetter, Daniel. Tue . "Plasma-assisted MBE growth of nitride-based intersubband detectors". United States. doi:10.1063/1.2729975.
@article{osti_21055057,
title = {Plasma-assisted MBE growth of nitride-based intersubband detectors},
author = {Monroy, Eva and Guillot, Fabien and Leconte, Sylvain and Bellet-Amalric, Edith and Baumann, Esther and Giorgetta, Fabrizio R. and Hofstetter, Daniel},
abstractNote = {In this work, we present the plasma-assisted molecular-beam epitaxy of quantum well infrared photodetector structures, including the Si-doped GaN/AlN short-period superlattice of the active region, AlGaN claddings and integration of the final device. Photovoltage measurements of complete devices reveal a narrow ({approx}90 meV) detection peak at 1.39 {mu}m at room temperature.},
doi = {10.1063/1.2729975},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}