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Title: Plasma-assisted MBE growth of nitride-based intersubband detectors

Abstract

In this work, we present the plasma-assisted molecular-beam epitaxy of quantum well infrared photodetector structures, including the Si-doped GaN/AlN short-period superlattice of the active region, AlGaN claddings and integration of the final device. Photovoltage measurements of complete devices reveal a narrow ({approx}90 meV) detection peak at 1.39 {mu}m at room temperature.

Authors:
; ; ;  [1]; ; ;  [2]
  1. Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)
  2. University of Neuchatel, 2000 Neuchatel (Switzerland)
Publication Date:
OSTI Identifier:
21055057
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729975; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CLADDING; CRYSTAL GROWTH; DOPED MATERIALS; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PLASMA; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SUPERLATTICES

Citation Formats

Monroy, Eva, Guillot, Fabien, Leconte, Sylvain, Bellet-Amalric, Edith, Baumann, Esther, Giorgetta, Fabrizio R., and Hofstetter, Daniel. Plasma-assisted MBE growth of nitride-based intersubband detectors. United States: N. p., 2007. Web. doi:10.1063/1.2729975.
Monroy, Eva, Guillot, Fabien, Leconte, Sylvain, Bellet-Amalric, Edith, Baumann, Esther, Giorgetta, Fabrizio R., & Hofstetter, Daniel. Plasma-assisted MBE growth of nitride-based intersubband detectors. United States. doi:10.1063/1.2729975.
Monroy, Eva, Guillot, Fabien, Leconte, Sylvain, Bellet-Amalric, Edith, Baumann, Esther, Giorgetta, Fabrizio R., and Hofstetter, Daniel. Tue . "Plasma-assisted MBE growth of nitride-based intersubband detectors". United States. doi:10.1063/1.2729975.
@article{osti_21055057,
title = {Plasma-assisted MBE growth of nitride-based intersubband detectors},
author = {Monroy, Eva and Guillot, Fabien and Leconte, Sylvain and Bellet-Amalric, Edith and Baumann, Esther and Giorgetta, Fabrizio R. and Hofstetter, Daniel},
abstractNote = {In this work, we present the plasma-assisted molecular-beam epitaxy of quantum well infrared photodetector structures, including the Si-doped GaN/AlN short-period superlattice of the active region, AlGaN claddings and integration of the final device. Photovoltage measurements of complete devices reveal a narrow ({approx}90 meV) detection peak at 1.39 {mu}m at room temperature.},
doi = {10.1063/1.2729975},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}
  • We have investigated the early stages of Alpha-Fe2O3 (0001) film growth on Alpha-Al2O3 (0001) using oxygen-plasma-enhanced molecular beam epitaxy along with reflection high-energy electron diffraction, noncontact atomic force microscopy, and x-ray photoelectron spectroscopy and diffraction. A compressionally-strained, fully-stoichiometric Alpha-Fe2O3 film three monolayers thick forms prior to the onset of three-dimensional island formation and lattice relaxation. The surface of this film appears to buckle along <1120>, giving rise to a new set of inwardly-contracted diffraction spots which, if not resolved from the substrate spots, could be interpreted as a 12% in-plane lattice parameter expansion. Such an interpretation has led prior investigatormore » to conclude that the interfacial layer consists of a disordered cation layer with an in-plane lattice parameter {approx}6% larger than that of Alpha-Fe2O3[4]. Our interpretation of the diffraction data suggests that the interfacial layer is badly distorted, but commensurate with the substrate.« less
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  • The asymmetric photoresponse and dark current of GaAs/AlAs/Al[sub 0.3]Ga[sub 0.7]As 3-5[mu]m intersubband photodetectors is examined both experimentally and through simulations. The intended doping position is varied to determine the importance of dopant redistribution on the detector characteristics. Growth interruptions were introduced to determine the importance of inequivalent heterointerface roughness. An improved segregation model is developed which includes the influence of an incident doping flux. The growth-rate limited silicon incorporation coefficient during GaAs growth was determined as a function of growth temperature and growth rate from published SIMS profiles. The conduction band bending in these detectors was calculated semiclassically to estimatemore » the applied voltage necessary to compensate the doping asymmetry. Si segregation explains 75--100% of the experimentally observed compensating voltage, without the introduction of fitting parameters. The remaining portion of the compensating voltage is largely due to asymmetric interface roughness. Growth interruptions reduce the linewidth of the QW intersubband absorption and also the detector responsivities, in apparent agreement with theoretical predictions.« less
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