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Title: Programming the Shape of Highly Ordered Ge Islands on Si: from Dots to Rods

Abstract

In the Ge on Si model heteroepitaxial system, we show that metal patterns on the Si surface induce the assembly of deposited Ge atoms into highly ordered islands whose shapes are programmed by a combination of metal species and substrate orientation. The island shapes including truncated pyramids and nanorods are radically different from those grown on metal-free surfaces and arise by a process whereby intermixing between deposited Ge and substrate Si atoms from the onset of island formation facilitate the island shape evolution.

Authors:
; ;  [1];  [2];  [3]
  1. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States)
  2. (United States)
  3. Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)
Publication Date:
OSTI Identifier:
21055055
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729758; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; EPITAXY; GERMANIUM; NANOSTRUCTURES; ORIENTATION; SILICON; SUBSTRATES; SURFACES

Citation Formats

Dubon, O. D., Robinson, J. T., Cao, Y., Lawrence Berkeley National Laboratory, Berkeley, CA 94720, and Liddle, J. A.. Programming the Shape of Highly Ordered Ge Islands on Si: from Dots to Rods. United States: N. p., 2007. Web. doi:10.1063/1.2729758.
Dubon, O. D., Robinson, J. T., Cao, Y., Lawrence Berkeley National Laboratory, Berkeley, CA 94720, & Liddle, J. A.. Programming the Shape of Highly Ordered Ge Islands on Si: from Dots to Rods. United States. doi:10.1063/1.2729758.
Dubon, O. D., Robinson, J. T., Cao, Y., Lawrence Berkeley National Laboratory, Berkeley, CA 94720, and Liddle, J. A.. Tue . "Programming the Shape of Highly Ordered Ge Islands on Si: from Dots to Rods". United States. doi:10.1063/1.2729758.
@article{osti_21055055,
title = {Programming the Shape of Highly Ordered Ge Islands on Si: from Dots to Rods},
author = {Dubon, O. D. and Robinson, J. T. and Cao, Y. and Lawrence Berkeley National Laboratory, Berkeley, CA 94720 and Liddle, J. A.},
abstractNote = {In the Ge on Si model heteroepitaxial system, we show that metal patterns on the Si surface induce the assembly of deposited Ge atoms into highly ordered islands whose shapes are programmed by a combination of metal species and substrate orientation. The island shapes including truncated pyramids and nanorods are radically different from those grown on metal-free surfaces and arise by a process whereby intermixing between deposited Ge and substrate Si atoms from the onset of island formation facilitate the island shape evolution.},
doi = {10.1063/1.2729758},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}