skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Multiple-hydrogen complexes in dilute nitride alloys

Abstract

Complexes formed by H and the isoelectronic impurity N in GaAs1-yNy alloys have been widely investigated to explain the significant effects of N on the host material properties and their passivation by H. However, available results still present a quite puzzling picture, none of the models proposed by theory for the N-H complexes being able to account for all of the experimental findings. An N-H{sub 2}* complex first proposed by theory was challenged by infrared results. A following C2{nu} complex has been challenged by a recent high resolution x-ray diffraction and photoluminescence spectroscopy study questioning the structural effects of this complex. In the present study, we show that a peculiar character of the H interaction with an isoelectronic impurity can induce the formation of novel, multiple-H complexes. In turn, one of this complexes can account for the H structural effects recently observed, thus reconciling theory and experiment.

Authors:
; ;  [1]
  1. CNR - Istituto di Struttura della Materia (ISM), Via Salaria Km 29.5, CP 10, 00016 Monterotondo Stazione, (Italy)
Publication Date:
OSTI Identifier:
21055050
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729854; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; EMISSION SPECTROSCOPY; GALLIUM ARSENIDES; HYDROGEN; HYDROGEN COMPLEXES; IMPURITIES; NITRIDES; PASSIVATION; PHOTOLUMINESCENCE; RESOLUTION; SEMICONDUCTOR MATERIALS; X-RAY DIFFRACTION

Citation Formats

Amore Bonapasta, A., Filippone, F., and Mattioli, G.. Multiple-hydrogen complexes in dilute nitride alloys. United States: N. p., 2007. Web. doi:10.1063/1.2729854.
Amore Bonapasta, A., Filippone, F., & Mattioli, G.. Multiple-hydrogen complexes in dilute nitride alloys. United States. doi:10.1063/1.2729854.
Amore Bonapasta, A., Filippone, F., and Mattioli, G.. Tue . "Multiple-hydrogen complexes in dilute nitride alloys". United States. doi:10.1063/1.2729854.
@article{osti_21055050,
title = {Multiple-hydrogen complexes in dilute nitride alloys},
author = {Amore Bonapasta, A. and Filippone, F. and Mattioli, G.},
abstractNote = {Complexes formed by H and the isoelectronic impurity N in GaAs1-yNy alloys have been widely investigated to explain the significant effects of N on the host material properties and their passivation by H. However, available results still present a quite puzzling picture, none of the models proposed by theory for the N-H complexes being able to account for all of the experimental findings. An N-H{sub 2}* complex first proposed by theory was challenged by infrared results. A following C2{nu} complex has been challenged by a recent high resolution x-ray diffraction and photoluminescence spectroscopy study questioning the structural effects of this complex. In the present study, we show that a peculiar character of the H interaction with an isoelectronic impurity can induce the formation of novel, multiple-H complexes. In turn, one of this complexes can account for the H structural effects recently observed, thus reconciling theory and experiment.},
doi = {10.1063/1.2729854},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}