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Title: Optically Detected Extended X-Ray Absorption Fine Structure Study of InGaN/GaN Single Quantum Wells

Abstract

We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.

Authors:
; ; ;  [1];  [2]; ;  [3]; ;  [4];  [5]
  1. School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD (United Kingdom)
  2. Synchrotron Radiation Department, Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom)
  3. School of Physics and Astronomy, University of Manchester, Manchester M60 1QD (United Kingdom)
  4. Dept. of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)
  5. MAX-lab, Lund University, P.O. Box 118, SE- 221 00 Lund (Sweden)
Publication Date:
OSTI Identifier:
21055046
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2730478; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; CRYSTAL STRUCTURE; FINE STRUCTURE; GALLIUM NITRIDES; INDIUM NITRIDES; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; X-RAY SPECTROSCOPY

Citation Formats

Rigopoulos, N., Hamilton, B., Davies, G. J., Towlson, B. M., Poolton, N. R. J., Dawson, P., Graham, D. M., Kappers, M. J., Humphreys, C. J., and Carlson, S. Optically Detected Extended X-Ray Absorption Fine Structure Study of InGaN/GaN Single Quantum Wells. United States: N. p., 2007. Web. doi:10.1063/1.2730478.
Rigopoulos, N., Hamilton, B., Davies, G. J., Towlson, B. M., Poolton, N. R. J., Dawson, P., Graham, D. M., Kappers, M. J., Humphreys, C. J., & Carlson, S. Optically Detected Extended X-Ray Absorption Fine Structure Study of InGaN/GaN Single Quantum Wells. United States. doi:10.1063/1.2730478.
Rigopoulos, N., Hamilton, B., Davies, G. J., Towlson, B. M., Poolton, N. R. J., Dawson, P., Graham, D. M., Kappers, M. J., Humphreys, C. J., and Carlson, S. Tue . "Optically Detected Extended X-Ray Absorption Fine Structure Study of InGaN/GaN Single Quantum Wells". United States. doi:10.1063/1.2730478.
@article{osti_21055046,
title = {Optically Detected Extended X-Ray Absorption Fine Structure Study of InGaN/GaN Single Quantum Wells},
author = {Rigopoulos, N. and Hamilton, B. and Davies, G. J. and Towlson, B. M. and Poolton, N. R. J. and Dawson, P. and Graham, D. M. and Kappers, M. J. and Humphreys, C. J. and Carlson, S.},
abstractNote = {We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.},
doi = {10.1063/1.2730478},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}
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