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Title: Large nitrogen composition of GaNSb grown by RF-MBE

Abstract

GaNSb films were grown using molecular beam epitaxy with a nitrogen radio frequency plasma source. GaNSb films with up to 1% nitrogen composition were obtained by changing the growth temperature. The GaNSb absorption edge which is longer than that of GaSb, was confirmed at about 0.53 eV using a Fourier transform infrared spectrometer in the sample grown at 450 deg. C.

Authors:
; ; ; ;  [1]
  1. National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)
Publication Date:
OSTI Identifier:
21055045
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2730470; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; CRYSTAL GROWTH; EV RANGE; FILMS; FOURIER TRANSFORMATION; GALLIUM ANTIMONIDES; INFRARED SPECTRA; LAYERS; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS

Citation Formats

Akahane, Kouichi, Yamamoto, Naokatsu, Gozu, Shin-ichiro, Ueta, Akio, and Tsuchiya, Masahiro. Large nitrogen composition of GaNSb grown by RF-MBE. United States: N. p., 2007. Web. doi:10.1063/1.2730470.
Akahane, Kouichi, Yamamoto, Naokatsu, Gozu, Shin-ichiro, Ueta, Akio, & Tsuchiya, Masahiro. Large nitrogen composition of GaNSb grown by RF-MBE. United States. doi:10.1063/1.2730470.
Akahane, Kouichi, Yamamoto, Naokatsu, Gozu, Shin-ichiro, Ueta, Akio, and Tsuchiya, Masahiro. Tue . "Large nitrogen composition of GaNSb grown by RF-MBE". United States. doi:10.1063/1.2730470.
@article{osti_21055045,
title = {Large nitrogen composition of GaNSb grown by RF-MBE},
author = {Akahane, Kouichi and Yamamoto, Naokatsu and Gozu, Shin-ichiro and Ueta, Akio and Tsuchiya, Masahiro},
abstractNote = {GaNSb films were grown using molecular beam epitaxy with a nitrogen radio frequency plasma source. GaNSb films with up to 1% nitrogen composition were obtained by changing the growth temperature. The GaNSb absorption edge which is longer than that of GaSb, was confirmed at about 0.53 eV using a Fourier transform infrared spectrometer in the sample grown at 450 deg. C.},
doi = {10.1063/1.2730470},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}
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