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Title: Intrinsic ferromagnetism in wurtzite (Ga,Mn)N grown by plasma-assisted molecular-beam epitaxy

Abstract

We report on the intrinsic ferromagnetic properties of wurtzite Ga0.937Mn0.063N diluted magnetic semiconductor grown by plasma-assisted molecular beam epitaxy. The growth conditions were carefully optimized to obtain single phase (Ga,Mn)N samples. The high structural quality is confirmed by x-ray diffraction experiments. Ferromagnetism is unambiguously demonstrated by both macroscopic magnetization measurements and x-ray magnetic circular dichroism spectra recorded at the Mn K-edge. The Curie temperature is found {approx_equal}8 K with a spontaneous magnetic moment of 2.4 {mu}B per Mn at 2 K.

Authors:
; ; ;  [1]; ; ;  [2]; ;  [3]
  1. CEA-CNRS-UJF group 'Nanophysique et Semiconducteurs', DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
  2. European Synchrotron Radiation Facility (ESRF), BP 220, 38043 Grenoble (France)
  3. Louis Neel, CNRS, BP 166, 38042 Grenoble (France)
Publication Date:
OSTI Identifier:
21055043
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2730315; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; CURIE POINT; DEPOSITION; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM NITRIDES; LAYERS; MAGNETIC CIRCULAR DICHROISM; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MANGANESE NITRIDES; MOLECULAR BEAM EPITAXY; X-RAY DIFFRACTION; X-RAY SPECTRA

Citation Formats

Sarigiannidou, E., Monroy, E., Bellet-Amalric, E., Mariette, H., Wilhelm, F., Rogalev, A., Goulon, J., Galera, R. M., and Cibert, J.. Intrinsic ferromagnetism in wurtzite (Ga,Mn)N grown by plasma-assisted molecular-beam epitaxy. United States: N. p., 2007. Web. doi:10.1063/1.2730315.
Sarigiannidou, E., Monroy, E., Bellet-Amalric, E., Mariette, H., Wilhelm, F., Rogalev, A., Goulon, J., Galera, R. M., & Cibert, J.. Intrinsic ferromagnetism in wurtzite (Ga,Mn)N grown by plasma-assisted molecular-beam epitaxy. United States. doi:10.1063/1.2730315.
Sarigiannidou, E., Monroy, E., Bellet-Amalric, E., Mariette, H., Wilhelm, F., Rogalev, A., Goulon, J., Galera, R. M., and Cibert, J.. Tue . "Intrinsic ferromagnetism in wurtzite (Ga,Mn)N grown by plasma-assisted molecular-beam epitaxy". United States. doi:10.1063/1.2730315.
@article{osti_21055043,
title = {Intrinsic ferromagnetism in wurtzite (Ga,Mn)N grown by plasma-assisted molecular-beam epitaxy},
author = {Sarigiannidou, E. and Monroy, E. and Bellet-Amalric, E. and Mariette, H. and Wilhelm, F. and Rogalev, A. and Goulon, J. and Galera, R. M. and Cibert, J.},
abstractNote = {We report on the intrinsic ferromagnetic properties of wurtzite Ga0.937Mn0.063N diluted magnetic semiconductor grown by plasma-assisted molecular beam epitaxy. The growth conditions were carefully optimized to obtain single phase (Ga,Mn)N samples. The high structural quality is confirmed by x-ray diffraction experiments. Ferromagnetism is unambiguously demonstrated by both macroscopic magnetization measurements and x-ray magnetic circular dichroism spectra recorded at the Mn K-edge. The Curie temperature is found {approx_equal}8 K with a spontaneous magnetic moment of 2.4 {mu}B per Mn at 2 K.},
doi = {10.1063/1.2730315},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}
  • (Mn, N)-codoped TiO{sub 2} films have been fabricated by plasma assisted molecular beam epitaxy. X-ray diffraction and x-ray photoelectron spectroscopy studies indicate the incorporation of both Mn and N ions into the TiO{sub 2} lattice but without Mn metal clusters. Ferromagnetism with clear hysteresis at 300 K is observed in (Mn, N)-codoped TiO{sub 2} films, whereas the films without nitrogen show paramagnetic behavior. It is demonstrated experimentally that the intentional nitrogen doping plays an important role in realizing dominant ferromagnetic ordering in Mn-doped TiO{sub 2} films.
  • No abstract prepared.
  • Structures with incommensurate ordering along the [0001] direction are observed in wurtzite Al{sub 0.72}Ga{sub 0.28}N alloys grown by plasma-assisted molecular beam epitaxy on c-plane sapphire. Films grown in environments with group-III/N ratios greater than 1 exhibit ordered superlattice structures that are incommensurate with the wurtzite crystal lattice. In contrast, films grown under nitrogen-rich conditions exhibit ordered structures with a periodicity of four cation-N monolayers. The increasing complexity of the ordering with increasing Ga-rich growth environment suggests that the ordering is related to the presence of a Ga overlayer believed to exist on the surface of the growing film.
  • A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trendmore » with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis.« less
  • We investigated deep-level traps formed in Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures grown using plasma-assisted molecular beam epitaxy and by performing deep level transient spectroscopy (DLTS). Two electron traps with activation energies of E{sub c}-150 meV and E{sub c}-250 meV were observed, and their capture cross-sections ({sigma}{sub T}) were estimated to be 2.0x10{sup -18} cm{sup 2} and 1.1x10{sup -17} cm{sup 2}, respectively. Different behaviors in the dependence of DLTS on filling pulse length confirm that the traps originated from N vacancies and dislocations. The amplitude of the dislocation-induced DLTS signal was reduced significantly by high-temperature rapid thermal annealing under N{sub 2} ambientmore » after hydrogen treatment due to the reduction in dislocation density.« less