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Title: Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures

Abstract

Atomistic structure of ZnSe needle-like nanowires on a ZnSe/GaAs(001) epitaxial layer, grown catalytically by means of molecular beam epitaxy operated at low temperatures (527 or 573 K), was studied. A nanowire was the zinc blende structure. The diameter at the top was in the range from 8 to 20 nm, and the length was about 200 nm. It was implied that the optical property differs from that of the bulk crystals, presumably due to the wire confinement effect.

Authors:
; ;  [1];  [2];  [2];  [3]
  1. Department of Physics, Graduate School of Science, Osaka University, 1-1, Machikane-yama, Toyonaka, Osaka 560-0043 (Japan)
  2. Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
21055042
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 893; Journal Issue: 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729797; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CATALYSIS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALS; GALLIUM ARSENIDES; LAYERS; LENGTH; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; ZINC SELENIDES

Citation Formats

Ohno, Y., Shirahama, T., Takeda, S., Ishizumi, A., Kanemitsu, Y., and Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011. Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures. United States: N. p., 2007. Web. doi:10.1063/1.2729797.
Ohno, Y., Shirahama, T., Takeda, S., Ishizumi, A., Kanemitsu, Y., & Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011. Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures. United States. doi:10.1063/1.2729797.
Ohno, Y., Shirahama, T., Takeda, S., Ishizumi, A., Kanemitsu, Y., and Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011. Tue . "Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures". United States. doi:10.1063/1.2729797.
@article{osti_21055042,
title = {Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures},
author = {Ohno, Y. and Shirahama, T. and Takeda, S. and Ishizumi, A. and Kanemitsu, Y. and Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011},
abstractNote = {Atomistic structure of ZnSe needle-like nanowires on a ZnSe/GaAs(001) epitaxial layer, grown catalytically by means of molecular beam epitaxy operated at low temperatures (527 or 573 K), was studied. A nanowire was the zinc blende structure. The diameter at the top was in the range from 8 to 20 nm, and the length was about 200 nm. It was implied that the optical property differs from that of the bulk crystals, presumably due to the wire confinement effect.},
doi = {10.1063/1.2729797},
journal = {AIP Conference Proceedings},
number = 1,
volume = 893,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2007},
month = {Tue Apr 10 00:00:00 EDT 2007}
}
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