Laterally Aligned GaAs Quantum Dot Molecules Grown by Droplet Epitaxy

Journal Article · Tue Apr 10 00:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2729794· OSTI ID:21055040

Yamagiwa, M; Mano, T; Sakoda, K; Kido, G; Koguchi, N ^[1]; Kuroda, T ^[1]; Minami, F ^[2]

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1. Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)
2. Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551 (Japan)

Laterally aligned, unstrained GaAs/AlGaAs quantum dot molecules (QDMs) are created by droplet epitaxy, utilizing the anisotropic surface potentials of the GaAs (100) surface for the migration of Ga adatoms. Single QDM photoluminescence spectra show a doublet structure, for which effective mass approximation calculations (including the size of the QDM) suggest it originates from molecular orbital energy levels in the QDM.

• OSTI ID: 21055040
• Journal Information: AIP Conference Proceedings, Vol. 893, Issue 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729794; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ANISOTROPY
APPROXIMATIONS
CRYSTAL GROWTH
DROPLETS
EFFECTIVE MASS
EMISSION SPECTRA
ENERGY LEVELS
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
MOLECULAR ORBITAL METHOD
MOLECULES
PHOTOLUMINESCENCE
QUANTUM DOTS
SURFACE POTENTIAL
SURFACES