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Title: Real Time Monitoring of Growing Nanoparticles by Insito Small Angle Grazing Incidence X-Ray Scattering

Abstract

No abstract prepared.

Authors:
Publication Date:
OSTI Identifier:
21054910
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 888; Journal Issue: 1; Conference: MTPR-06: 2. international conference on modern trends in physics research, Cairo (Egypt), 6-11 Apr 2006; Other Information: DOI: 10.1063/1.2711137; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; MONITORING; NANOSTRUCTURES; PARTICLES; SMALL ANGLE SCATTERING; X-RAY DIFFRACTION

Citation Formats

Renaud, Gilles. Real Time Monitoring of Growing Nanoparticles by Insito Small Angle Grazing Incidence X-Ray Scattering. United States: N. p., 2007. Web. doi:10.1063/1.2711137.
Renaud, Gilles. Real Time Monitoring of Growing Nanoparticles by Insito Small Angle Grazing Incidence X-Ray Scattering. United States. doi:10.1063/1.2711137.
Renaud, Gilles. Wed . "Real Time Monitoring of Growing Nanoparticles by Insito Small Angle Grazing Incidence X-Ray Scattering". United States. doi:10.1063/1.2711137.
@article{osti_21054910,
title = {Real Time Monitoring of Growing Nanoparticles by Insito Small Angle Grazing Incidence X-Ray Scattering},
author = {Renaud, Gilles},
abstractNote = {No abstract prepared.},
doi = {10.1063/1.2711137},
journal = {AIP Conference Proceedings},
number = 1,
volume = 888,
place = {United States},
year = {Wed Feb 14 00:00:00 EST 2007},
month = {Wed Feb 14 00:00:00 EST 2007}
}
  • A challenge to produce nano-objects with given properties is to control in situ and in real time large collection of growing nanoparticles at a macroscopic scale. This requires to go beyond existing post mortem and/or time consuming analyzes. A dedicated Grazing Incidence Small Angle X-ray Scattering (GISAXS) set up has been developed, allowing real time imaging in k-space of growing nano-particles. The capabilities to derive the average particle shape and size, the film growth mode and the degree of order within the film are illustrated on two prototypical cases: the model catalyst Pd/MgO(100) and the self-organized Co/Au(111) system.
  • The role of RH (relative humidity) during the formation of templated silica thin films has been investigated using real-time grazing incidence small-angle x-ray scattering. A detailed analysis of the evolution of the lattice parameters as a function of RH is presented. It is shown that in the modulable steady state, the lattice parameter parallel to the surface is pinned after a transient regime is reached while the parameter normal to the surface can still vary. In the initial stage we find that the film can take up to one layer of water per micelle. Interferometric measurements confirm that swelling occursmore » in the entire film. An explanation of the pinning effect is presented.« less
  • Gallium adsorption and desorption on c-plane sapphire has been studied by real-time grazing incidence small-angle x-ray scattering and x-ray fluorescence as a function of substrate temperature (680-740 C) and Ga flux. The x-ray techniques monitor the surface morphology evolution and amount of Ga on the surface. During deposition, nanodroplets of liquid Ga are observed to form on the surface and coarsen. The growth of droplet size during continuous deposition follows dynamical scaling, in agreement with expectations from theory and simulations which include deposition-induced droplet coalescence. However, observation of continued droplet distance scale coarsening during desorption points to the necessity ofmore » including further physical processes in the modeling. The desorption rate at different substrate temperatures gives the activation energy of Ga desorption as 2.7 eV, comparable to measured activation energies for desorption from Ga droplets on other substrates and to the Ga heat of vaporization.« less
  • Gallium adsorption and desorption on c-plane sapphire has been studied by real-time grazing incidence small-angle x-ray scattering and x-ray fluorescence as a function of substrate temperature (680-740 deg. C) and Ga flux. The x-ray techniques monitor the surface morphology evolution and amount of Ga on the surface. During deposition, nanodroplets of liquid Ga are observed to form on the surface and coarsen. The growth of droplet size during continuous deposition follows dynamical scaling, in agreement with expectations from theory and simulations which include deposition-induced droplet coalescence. However, observation of continued droplet distance scale coarsening during desorption points to the necessitymore » of including further physical processes in the modeling. The desorption rate at different substrate temperatures gives the activation energy of Ga desorption as 2.7 eV, comparable to measured activation energies for desorption from Ga droplets on other substrates and to the Ga heat of vaporization.« less