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Title: X-Ray Absorption Microspectroscopy with Electrostatic Force Microscopy and its Application to Chemical States Mapping

Abstract

A new technique named X-EFM that measures the x-ray absorption fine structure (XAFS) of nanometer objects was developed. In X-EFM, electrostatic force microscopy (EFM) is used as an x-ray absorption detector, and photoionization induced by x-ray absorption of surface electron trapping sites is detected by EFM. An EFM signal with respect to x-ray photon energy provides the XAFS spectra of the trapping sites. We adopted X-EFM to observe Si oxide thin films. An edge jump shift intrinsic to the X-EFM spectrum was found, and it was explained with a model where an electric field between the trapping site and probe deepens the energy level of the inner-shell. A scanning probe under x-rays with fixed photon energy provided the chemical state mapping on the surface.

Authors:
 [1]; ;  [2];  [3]
  1. JASRI/RIKEN Harima Inst., SPring-8, Sayo-gun, Hyogo, 679-5198, (Japan)
  2. University of Manchester, Manchester, M60 1QD (United Kingdom)
  3. Daresbury Laboratory, Daresbury, Warrington, WA4 4AD (United Kingdom)
Publication Date:
OSTI Identifier:
21054739
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 882; Journal Issue: 1; Conference: XAFS13: 13. international conference on X-ray absorption fine structure, Stanford, CA (United States), 9-14 Jul 2006; Other Information: DOI: 10.1063/1.2644656; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; CHEMICAL STATE; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY LEVELS; FINE STRUCTURE; MICROSCOPY; PHOTOIONIZATION; SILICON OXIDES; THIN FILMS; X-RAY SPECTRA; X-RAY SPECTROSCOPY

Citation Formats

Ishii, M., Rigopoulos, N., Hamilton, B., and Poolton, N. R. J. X-Ray Absorption Microspectroscopy with Electrostatic Force Microscopy and its Application to Chemical States Mapping. United States: N. p., 2007. Web. doi:10.1063/1.2644656.
Ishii, M., Rigopoulos, N., Hamilton, B., & Poolton, N. R. J. X-Ray Absorption Microspectroscopy with Electrostatic Force Microscopy and its Application to Chemical States Mapping. United States. doi:10.1063/1.2644656.
Ishii, M., Rigopoulos, N., Hamilton, B., and Poolton, N. R. J. Fri . "X-Ray Absorption Microspectroscopy with Electrostatic Force Microscopy and its Application to Chemical States Mapping". United States. doi:10.1063/1.2644656.
@article{osti_21054739,
title = {X-Ray Absorption Microspectroscopy with Electrostatic Force Microscopy and its Application to Chemical States Mapping},
author = {Ishii, M. and Rigopoulos, N. and Hamilton, B. and Poolton, N. R. J.},
abstractNote = {A new technique named X-EFM that measures the x-ray absorption fine structure (XAFS) of nanometer objects was developed. In X-EFM, electrostatic force microscopy (EFM) is used as an x-ray absorption detector, and photoionization induced by x-ray absorption of surface electron trapping sites is detected by EFM. An EFM signal with respect to x-ray photon energy provides the XAFS spectra of the trapping sites. We adopted X-EFM to observe Si oxide thin films. An edge jump shift intrinsic to the X-EFM spectrum was found, and it was explained with a model where an electric field between the trapping site and probe deepens the energy level of the inner-shell. A scanning probe under x-rays with fixed photon energy provided the chemical state mapping on the surface.},
doi = {10.1063/1.2644656},
journal = {AIP Conference Proceedings},
number = 1,
volume = 882,
place = {United States},
year = {Fri Feb 02 00:00:00 EST 2007},
month = {Fri Feb 02 00:00:00 EST 2007}
}