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Title: Site Determination of Doped Ga Ions in SrTiO3:Pr3+ Phosphor for Field Emission Displays by XAFS

Abstract

The enormous enhancement of the emission intensity from SrTiO3:Pr3+ by addition of Al or Ga ions was found. In case of Al, it was reported that the emission enhancement is caused by charge compensation and reduction of planar faults in the host lattices. In order to clarify the mechanism of the enhancement of the emission from SrTiO3:Pr3+ by addition of Ga ions, we investigated the local structure of doped Ga ions in SrTiO3:Pr3+ (a red phosphor for Field Emission Display) by XAFS analysis. The XAFS analysis indicates that doped Ga ions substitute for Ti site in the crystal.

Authors:
 [1];  [2]
  1. Japan Synchrotron Radiation Research Institute, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan)
  2. Tokyo University of Technology, 1404-1, Katakura, Hachiohji, Tokyo 192-0982 (Japan)
Publication Date:
OSTI Identifier:
21054658
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 882; Journal Issue: 1; Conference: XAFS13: 13. international conference on X-ray absorption fine structure, Stanford, CA (United States), 9-14 Jul 2006; Other Information: DOI: 10.1063/1.2644561; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; CRYSTAL DEFECTS; CRYSTAL DOPING; CRYSTALS; DOPED MATERIALS; FIELD EMISSION; FINE STRUCTURE; GALLIUM IONS; PHOSPHORS; PRASEODYMIUM ALLOYS; STRONTIUM TITANATES; X-RAY SPECTRA; X-RAY SPECTROSCOPY

Citation Formats

Honma, Tetsuo, and Yamamoto, Hajime. Site Determination of Doped Ga Ions in SrTiO3:Pr3+ Phosphor for Field Emission Displays by XAFS. United States: N. p., 2007. Web. doi:10.1063/1.2644561.
Honma, Tetsuo, & Yamamoto, Hajime. Site Determination of Doped Ga Ions in SrTiO3:Pr3+ Phosphor for Field Emission Displays by XAFS. United States. doi:10.1063/1.2644561.
Honma, Tetsuo, and Yamamoto, Hajime. Fri . "Site Determination of Doped Ga Ions in SrTiO3:Pr3+ Phosphor for Field Emission Displays by XAFS". United States. doi:10.1063/1.2644561.
@article{osti_21054658,
title = {Site Determination of Doped Ga Ions in SrTiO3:Pr3+ Phosphor for Field Emission Displays by XAFS},
author = {Honma, Tetsuo and Yamamoto, Hajime},
abstractNote = {The enormous enhancement of the emission intensity from SrTiO3:Pr3+ by addition of Al or Ga ions was found. In case of Al, it was reported that the emission enhancement is caused by charge compensation and reduction of planar faults in the host lattices. In order to clarify the mechanism of the enhancement of the emission from SrTiO3:Pr3+ by addition of Ga ions, we investigated the local structure of doped Ga ions in SrTiO3:Pr3+ (a red phosphor for Field Emission Display) by XAFS analysis. The XAFS analysis indicates that doped Ga ions substitute for Ti site in the crystal.},
doi = {10.1063/1.2644561},
journal = {AIP Conference Proceedings},
number = 1,
volume = 882,
place = {United States},
year = {Fri Feb 02 00:00:00 EST 2007},
month = {Fri Feb 02 00:00:00 EST 2007}
}