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Title: EXAFS Study of Semimetal-Semiconductor Transition of Bismuth Clusters

Abstract

Extended X-ray absorption fine structure (EXAFS) measurements of bismuth clusters in the temperature range of 23 -300 K have been performed using synchrotron radiation in order to investigate the size dependent phase transition. The inter-atomic distances around 3.0 A and 3.6 A are attributed to the nearest neighbors within the layer and between layers, respectively. EXAFS functions were analysed by the curve fitting method within a symmetric distribution approximation. The nearest neighbor distance of the 0.5 nm thick films is shorter than that of the 300 nm thick films at all the temperatures, which is related to the reduction of the inter-layer correlation.

Authors:
; ;  [1];  [2]
  1. Faculty of Science, University of Toyama, Toyama 930-8555 (Japan)
  2. Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan)
Publication Date:
OSTI Identifier:
21054648
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 882; Journal Issue: 1; Conference: XAFS13: 13. international conference on X-ray absorption fine structure, Stanford, CA (United States), 9-14 Jul 2006; Other Information: DOI: 10.1063/1.2644551; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; APPROXIMATIONS; ATOMIC CLUSTERS; BISMUTH; CORRELATIONS; FILMS; FINE STRUCTURE; LAYERS; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; SYNCHROTRON RADIATION; TEMPERATURE DEPENDENCE; X-RAY SPECTROSCOPY

Citation Formats

Ikemoto, H., Yoshida, S., Sogoh, J., and Miyanaga, T. EXAFS Study of Semimetal-Semiconductor Transition of Bismuth Clusters. United States: N. p., 2007. Web. doi:10.1063/1.2644551.
Ikemoto, H., Yoshida, S., Sogoh, J., & Miyanaga, T. EXAFS Study of Semimetal-Semiconductor Transition of Bismuth Clusters. United States. doi:10.1063/1.2644551.
Ikemoto, H., Yoshida, S., Sogoh, J., and Miyanaga, T. Fri . "EXAFS Study of Semimetal-Semiconductor Transition of Bismuth Clusters". United States. doi:10.1063/1.2644551.
@article{osti_21054648,
title = {EXAFS Study of Semimetal-Semiconductor Transition of Bismuth Clusters},
author = {Ikemoto, H. and Yoshida, S. and Sogoh, J. and Miyanaga, T.},
abstractNote = {Extended X-ray absorption fine structure (EXAFS) measurements of bismuth clusters in the temperature range of 23 -300 K have been performed using synchrotron radiation in order to investigate the size dependent phase transition. The inter-atomic distances around 3.0 A and 3.6 A are attributed to the nearest neighbors within the layer and between layers, respectively. EXAFS functions were analysed by the curve fitting method within a symmetric distribution approximation. The nearest neighbor distance of the 0.5 nm thick films is shorter than that of the 300 nm thick films at all the temperatures, which is related to the reduction of the inter-layer correlation.},
doi = {10.1063/1.2644551},
journal = {AIP Conference Proceedings},
number = 1,
volume = 882,
place = {United States},
year = {Fri Feb 02 00:00:00 EST 2007},
month = {Fri Feb 02 00:00:00 EST 2007}
}