skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation

Abstract

Compositional grading of group-III and V elements in InP/GaInAs/InP structures grown by OMVPE (organometallic vapor phase epitaxy) with various V/III ratios was investigated by utilizing X-ray CTR (crystal truncation rod) scattering. The results showed that the compositional grading both of As and Ga decreased by the increase of the V/III ratio. The compositional grading of Ga arised by the exchange with In in the InP cap layer, since the total amount of Ga showed almost no change with the increase of the V/III ratio. On the other hand, for As, the accumulation of precursors on the reactor wall and/or the adsorption of atoms on the surface and the susceptor mainly caused the compositional grading when V/III ratio was less than about 20. The exchange of atoms mainly caused the compositional grading of As when the V/III ratio was greater than about 20.

Authors:
; ;  [1];  [2];  [3];  [2];  [4]
  1. Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  2. Department of Crystalline Materials Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  3. Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  4. (Japan)
Publication Date:
OSTI Identifier:
21049327
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 879; Journal Issue: 1; Conference: 9. international conference on synchrotron radiation instrumentation, Daegu (Korea, Republic of), 28 May - 2 Jun 2006; Other Information: DOI: 10.1063/1.2436376; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; CRYSTALS; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; LAYERS; ORGANOMETALLIC COMPOUNDS; SEMICONDUCTOR MATERIALS; SURFACES; SYNCHROTRON RADIATION; VAPOR PHASE EPITAXY; X RADIATION; X-RAY DIFFRACTION

Citation Formats

Ohtake, Y., Eguchi, T., Lee, W. S., Miyake, S., Tabuchi, M., Takeda, Y., and Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603. Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation. United States: N. p., 2007. Web. doi:10.1063/1.2436376.
Ohtake, Y., Eguchi, T., Lee, W. S., Miyake, S., Tabuchi, M., Takeda, Y., & Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603. Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation. United States. doi:10.1063/1.2436376.
Ohtake, Y., Eguchi, T., Lee, W. S., Miyake, S., Tabuchi, M., Takeda, Y., and Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603. Fri . "Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation". United States. doi:10.1063/1.2436376.
@article{osti_21049327,
title = {Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation},
author = {Ohtake, Y. and Eguchi, T. and Lee, W. S. and Miyake, S. and Tabuchi, M. and Takeda, Y. and Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603},
abstractNote = {Compositional grading of group-III and V elements in InP/GaInAs/InP structures grown by OMVPE (organometallic vapor phase epitaxy) with various V/III ratios was investigated by utilizing X-ray CTR (crystal truncation rod) scattering. The results showed that the compositional grading both of As and Ga decreased by the increase of the V/III ratio. The compositional grading of Ga arised by the exchange with In in the InP cap layer, since the total amount of Ga showed almost no change with the increase of the V/III ratio. On the other hand, for As, the accumulation of precursors on the reactor wall and/or the adsorption of atoms on the surface and the susceptor mainly caused the compositional grading when V/III ratio was less than about 20. The exchange of atoms mainly caused the compositional grading of As when the V/III ratio was greater than about 20.},
doi = {10.1063/1.2436376},
journal = {AIP Conference Proceedings},
number = 1,
volume = 879,
place = {United States},
year = {Fri Jan 19 00:00:00 EST 2007},
month = {Fri Jan 19 00:00:00 EST 2007}
}
  • Cited by 6
  • We used the x-ray extended-range technique to measure the x-ray mass attenuation coefficients of silicon with an accuracy between 0.27% and 0.5% in the 5 keV-20 keV energy range. Subtraction of the x-ray scattering contribution enabled us to derive the corresponding x-ray photoelectric absorption coefficients and determine the absolute value of the imaginary part of the atomic form factor of silicon. Discrepancies between the experimental values of the mass attenuation coefficients and theoretically calculated values are discussed. New approaches to the theoretical calculation will be required to match the precision and accuracy of the experimental results.
  • We used the basis of the x-ray extended range technique to measure the lattice spacing of LaB{sub 6} standard powder samples relative to silicon 640b standard powder samples with an accuracy of 5x10{sup -5} A. Measurements were not constrained to one energy but were carried out over a 5 keV-20 keV energy range. These measurements used powder diffraction to determine the synchrotron beam energy, to diagnose discrepancies in the nominal calibrated beam energies, and to determine beam energy bandwidths as a function of energy. More specifically, this technique is able to yield a result independent of certain energy-dependent systematics andmore » to yield the most accurate determination of the lattice spacing of NIST SRM 660 LaB{sub 6} standard powder so far undertaken. This has direct application to beam line energy calibration, structural evaluation, edge energy calibration, and lattice spacing determinations.« less
  • The structural evolution of regenerated Bombyx mori silk fibroin during shearing with a Couette cell has been studied in situ by synchrotron radiation small- and wide-angle x-ray scattering techniques. An elongation of fibroin molecules was observed with increasing shear rate, followed by an aggregation phase. The aggregates were found to be amorphous with {beta}-conformation according to infrared spectroscopy. Scanning x-ray microdiffraction with a 5 {micro}m beam on aggregated material, which had solidified in air, showed silk II reflections and a material with equatorial reflections close to the silk I structure reflections, but with strong differences in reflection intensities. This silkmore » I type material shows up to two low-angle peaks suggesting the presence of water molecules that might be intercalated between hydrogen-bonded sheets.« less
  • Determination of the structure of biological particles, randomly oriented in solution, from spatial correlation analysis of fluctuations in x ray scattering has recently been proposed. The feasibility of scattering fluctuation measurements was evaluated by using an x ray synchrotron radiation camera to obtain the spatial correlation for a solution of tobacco mosaic virus along a line. The experimental system, analysis of data, and requirements for the determination of structures in solution are discussed using this example.