Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation
- Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
- Department of Crystalline Materials Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
- Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
Compositional grading of group-III and V elements in InP/GaInAs/InP structures grown by OMVPE (organometallic vapor phase epitaxy) with various V/III ratios was investigated by utilizing X-ray CTR (crystal truncation rod) scattering. The results showed that the compositional grading both of As and Ga decreased by the increase of the V/III ratio. The compositional grading of Ga arised by the exchange with In in the InP cap layer, since the total amount of Ga showed almost no change with the increase of the V/III ratio. On the other hand, for As, the accumulation of precursors on the reactor wall and/or the adsorption of atoms on the surface and the susceptor mainly caused the compositional grading when V/III ratio was less than about 20. The exchange of atoms mainly caused the compositional grading of As when the V/III ratio was greater than about 20.
- OSTI ID:
- 21049327
- Journal Information:
- AIP Conference Proceedings, Vol. 879, Issue 1; Conference: 9. international conference on synchrotron radiation instrumentation, Daegu (Korea, Republic of), 28 May - 2 Jun 2006; Other Information: DOI: 10.1063/1.2436376; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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