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Title: Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation

Abstract

Compositional grading of group-III and V elements in InP/GaInAs/InP structures grown by OMVPE (organometallic vapor phase epitaxy) with various V/III ratios was investigated by utilizing X-ray CTR (crystal truncation rod) scattering. The results showed that the compositional grading both of As and Ga decreased by the increase of the V/III ratio. The compositional grading of Ga arised by the exchange with In in the InP cap layer, since the total amount of Ga showed almost no change with the increase of the V/III ratio. On the other hand, for As, the accumulation of precursors on the reactor wall and/or the adsorption of atoms on the surface and the susceptor mainly caused the compositional grading when V/III ratio was less than about 20. The exchange of atoms mainly caused the compositional grading of As when the V/III ratio was greater than about 20.

Authors:
; ;  [1];  [2];  [3];  [2];  [4]
  1. Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  2. Department of Crystalline Materials Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  3. Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  4. (Japan)
Publication Date:
OSTI Identifier:
21049327
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 879; Journal Issue: 1; Conference: 9. international conference on synchrotron radiation instrumentation, Daegu (Korea, Republic of), 28 May - 2 Jun 2006; Other Information: DOI: 10.1063/1.2436376; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; CRYSTALS; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; LAYERS; ORGANOMETALLIC COMPOUNDS; SEMICONDUCTOR MATERIALS; SURFACES; SYNCHROTRON RADIATION; VAPOR PHASE EPITAXY; X RADIATION; X-RAY DIFFRACTION

Citation Formats

Ohtake, Y., Eguchi, T., Lee, W. S., Miyake, S., Tabuchi, M., Takeda, Y., and Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603. Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation. United States: N. p., 2007. Web. doi:10.1063/1.2436376.
Ohtake, Y., Eguchi, T., Lee, W. S., Miyake, S., Tabuchi, M., Takeda, Y., & Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603. Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation. United States. doi:10.1063/1.2436376.
Ohtake, Y., Eguchi, T., Lee, W. S., Miyake, S., Tabuchi, M., Takeda, Y., and Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603. Fri . "Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation". United States. doi:10.1063/1.2436376.
@article{osti_21049327,
title = {Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation},
author = {Ohtake, Y. and Eguchi, T. and Lee, W. S. and Miyake, S. and Tabuchi, M. and Takeda, Y. and Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603},
abstractNote = {Compositional grading of group-III and V elements in InP/GaInAs/InP structures grown by OMVPE (organometallic vapor phase epitaxy) with various V/III ratios was investigated by utilizing X-ray CTR (crystal truncation rod) scattering. The results showed that the compositional grading both of As and Ga decreased by the increase of the V/III ratio. The compositional grading of Ga arised by the exchange with In in the InP cap layer, since the total amount of Ga showed almost no change with the increase of the V/III ratio. On the other hand, for As, the accumulation of precursors on the reactor wall and/or the adsorption of atoms on the surface and the susceptor mainly caused the compositional grading when V/III ratio was less than about 20. The exchange of atoms mainly caused the compositional grading of As when the V/III ratio was greater than about 20.},
doi = {10.1063/1.2436376},
journal = {AIP Conference Proceedings},
number = 1,
volume = 879,
place = {United States},
year = {Fri Jan 19 00:00:00 EST 2007},
month = {Fri Jan 19 00:00:00 EST 2007}
}