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Title: Characterization of Amorphous High-k Thin Films by EXAFS and GIXS

Abstract

Silicon and nitrogen incorporated Hf oxide (HfSiON) is considered to be a promising alternative gate insulator for next-generation MOSFETs. EXAFS and GIXS (Grazing Incidence X-ray Scattering) have been applied to the characterization of amorphous HfSiON films at SPring-8. Novel cluster models have been suggested based on the analogy to the ordered states for the Zr-O-N ternary system.

Authors:
; ; ; ; ; ;  [1];  [2]; ;  [3]
  1. Corporate R and D Center, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582 (Japan)
  2. Toshiba Nanoanalysis Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583 (Japan)
  3. JASRI/SPring-8, 1-1-1, Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)
Publication Date:
OSTI Identifier:
21049321
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 879; Journal Issue: 1; Conference: 9. international conference on synchrotron radiation instrumentation, Daegu (Korea, Republic of), 28 May - 2 Jun 2006; Other Information: DOI: 10.1063/1.2436366; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; AMORPHOUS STATE; FINE STRUCTURE; HAFNIUM COMPOUNDS; MOSFET; NITROGEN; OPTICS; SILICON; SOLID CLUSTERS; SPRING-8 STORAGE RING; THIN FILMS; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY

Citation Formats

Takemura, Momoko, Yamazaki, Hideyuki, Ohmori, Hirobumi, Yoshiki, Masahiko, Takeno, Shiro, Ino, Tsunehiro, Nishiyama, Akira, Sato, Nobutaka, Hirosawa, Ichiro, and Sato, Masugu. Characterization of Amorphous High-k Thin Films by EXAFS and GIXS. United States: N. p., 2007. Web. doi:10.1063/1.2436366.
Takemura, Momoko, Yamazaki, Hideyuki, Ohmori, Hirobumi, Yoshiki, Masahiko, Takeno, Shiro, Ino, Tsunehiro, Nishiyama, Akira, Sato, Nobutaka, Hirosawa, Ichiro, & Sato, Masugu. Characterization of Amorphous High-k Thin Films by EXAFS and GIXS. United States. doi:10.1063/1.2436366.
Takemura, Momoko, Yamazaki, Hideyuki, Ohmori, Hirobumi, Yoshiki, Masahiko, Takeno, Shiro, Ino, Tsunehiro, Nishiyama, Akira, Sato, Nobutaka, Hirosawa, Ichiro, and Sato, Masugu. Fri . "Characterization of Amorphous High-k Thin Films by EXAFS and GIXS". United States. doi:10.1063/1.2436366.
@article{osti_21049321,
title = {Characterization of Amorphous High-k Thin Films by EXAFS and GIXS},
author = {Takemura, Momoko and Yamazaki, Hideyuki and Ohmori, Hirobumi and Yoshiki, Masahiko and Takeno, Shiro and Ino, Tsunehiro and Nishiyama, Akira and Sato, Nobutaka and Hirosawa, Ichiro and Sato, Masugu},
abstractNote = {Silicon and nitrogen incorporated Hf oxide (HfSiON) is considered to be a promising alternative gate insulator for next-generation MOSFETs. EXAFS and GIXS (Grazing Incidence X-ray Scattering) have been applied to the characterization of amorphous HfSiON films at SPring-8. Novel cluster models have been suggested based on the analogy to the ordered states for the Zr-O-N ternary system.},
doi = {10.1063/1.2436366},
journal = {AIP Conference Proceedings},
number = 1,
volume = 879,
place = {United States},
year = {Fri Jan 19 00:00:00 EST 2007},
month = {Fri Jan 19 00:00:00 EST 2007}
}