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Title: Characterization of 3D Trench PZT Capacitors for High Density FRAM Devices by Synchrotron X-ray Micro-diffraction

Abstract

3D trench PbZrxTi1-xO3 (PZT) capacitors for 256 Mbit 1T-1C FRAM devices were characterized by synchrotron X-ray micro-diffraction at Pohang Light Source. Three layers, Ir/PZT/Ir were deposited on SiO2 trench holes with different widths ranging from 180 nm to 810 nm and 400 nm in depth by ALD and MOCVD. Each hole is separated from neighboring holes by 200 nm. The cross sectional TEM analysis for the trenches revealed that the PZT layers were consisted of columnar grains at the trench entrance and changes to polycrystalline granular grains at the lower part of the trench. The transition from columnar to granular grains was dependent on the trench size. The smaller trenches were favorable to granular grain formation. High resolution synchrotron X-ray diffraction analysis was performed to determine the crystal structure of each region. The beam was focused to about 500 {mu}m and the diffraction patterns were obtained from a single trench. Only the peaks corresponding to ferroelectric tetragonal phases are observed for the trenches larger than 670 nm, which consist of fully columnar grains. However, the trenches smaller than 670 nm showed the peaks corresponding the pyrochlore phases, which suggested that the granular grains are of pyrochlore phases and non-ferroelectric.

Authors:
;  [1];  [2]; ;  [2];  [3];  [4]
  1. Nano Devices Laboratory, Samsung Advanced Institute of Technology (Korea, Republic of)
  2. Dep. of Materials Science and Engineering, Pohang University of Science and Technology, San 31, Hyoja-dong, Pohang, Gyungbuk, 790-784 (Korea, Republic of)
  3. (Korea, Republic of)
  4. Pohang Accelerator Laboratory, Pohang University of Science and Technology, San 31, Hyoja-dong, Pohang, Gyungbuk, 790-784 (Korea, Republic of)
Publication Date:
OSTI Identifier:
21049316
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 879; Journal Issue: 1; Conference: 9. international conference on synchrotron radiation instrumentation, Daegu (Korea, Republic of), 28 May - 2 Jun 2006; Other Information: DOI: 10.1063/1.2436361; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITORS; CERAMICS; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DENSITY; FERROELECTRIC MATERIALS; LAYERS; POHANG LIGHT SOURCE; POLYCRYSTALS; PYROCHLORE; PZT; RESOLUTION; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY DIFFRACTION

Citation Formats

Shin, Sangmin, Park, Youngsoo, Han, Hee, Park, Yong Jun, Baik, Sunggi, Pohang Accelerator Laboratory, Pohang University of Science and Technology, San 31, Hyoja-dong, Pohang, Gyungbuk, 790-784, and Choi, Jae-Young. Characterization of 3D Trench PZT Capacitors for High Density FRAM Devices by Synchrotron X-ray Micro-diffraction. United States: N. p., 2007. Web. doi:10.1063/1.2436361.
Shin, Sangmin, Park, Youngsoo, Han, Hee, Park, Yong Jun, Baik, Sunggi, Pohang Accelerator Laboratory, Pohang University of Science and Technology, San 31, Hyoja-dong, Pohang, Gyungbuk, 790-784, & Choi, Jae-Young. Characterization of 3D Trench PZT Capacitors for High Density FRAM Devices by Synchrotron X-ray Micro-diffraction. United States. doi:10.1063/1.2436361.
Shin, Sangmin, Park, Youngsoo, Han, Hee, Park, Yong Jun, Baik, Sunggi, Pohang Accelerator Laboratory, Pohang University of Science and Technology, San 31, Hyoja-dong, Pohang, Gyungbuk, 790-784, and Choi, Jae-Young. Fri . "Characterization of 3D Trench PZT Capacitors for High Density FRAM Devices by Synchrotron X-ray Micro-diffraction". United States. doi:10.1063/1.2436361.
@article{osti_21049316,
title = {Characterization of 3D Trench PZT Capacitors for High Density FRAM Devices by Synchrotron X-ray Micro-diffraction},
author = {Shin, Sangmin and Park, Youngsoo and Han, Hee and Park, Yong Jun and Baik, Sunggi and Pohang Accelerator Laboratory, Pohang University of Science and Technology, San 31, Hyoja-dong, Pohang, Gyungbuk, 790-784 and Choi, Jae-Young},
abstractNote = {3D trench PbZrxTi1-xO3 (PZT) capacitors for 256 Mbit 1T-1C FRAM devices were characterized by synchrotron X-ray micro-diffraction at Pohang Light Source. Three layers, Ir/PZT/Ir were deposited on SiO2 trench holes with different widths ranging from 180 nm to 810 nm and 400 nm in depth by ALD and MOCVD. Each hole is separated from neighboring holes by 200 nm. The cross sectional TEM analysis for the trenches revealed that the PZT layers were consisted of columnar grains at the trench entrance and changes to polycrystalline granular grains at the lower part of the trench. The transition from columnar to granular grains was dependent on the trench size. The smaller trenches were favorable to granular grain formation. High resolution synchrotron X-ray diffraction analysis was performed to determine the crystal structure of each region. The beam was focused to about 500 {mu}m and the diffraction patterns were obtained from a single trench. Only the peaks corresponding to ferroelectric tetragonal phases are observed for the trenches larger than 670 nm, which consist of fully columnar grains. However, the trenches smaller than 670 nm showed the peaks corresponding the pyrochlore phases, which suggested that the granular grains are of pyrochlore phases and non-ferroelectric.},
doi = {10.1063/1.2436361},
journal = {AIP Conference Proceedings},
number = 1,
volume = 879,
place = {United States},
year = {Fri Jan 19 00:00:00 EST 2007},
month = {Fri Jan 19 00:00:00 EST 2007}
}