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Title: Instrumentation for Microfabrication with Deep X-ray Lithography

Abstract

Deep X-ray lithography for microfabrication is performed at least at ten synchrotron radiation centers worldwide. The characteristic energies of these sources range from 1.4 keV up to 8 keV, covering mask making capabilities, deep X-ray lithography up to ultra deep x-ray lithography of several millimeters resist thickness. Limitations in deep X-ray lithography arise from hard X-rays in the SR-spectrum leading to adhesion losses of resist lines after the developing process, as well as heat load due to very high fluxes leading to thermal expansion of mask and resist during exposure and therefore to microstructure distortion. Considering the installations at ANKA as an example, the advantages of mirrors and central beam stops for DXRL are presented. Future research work will concentrate on feature sizes much below 1 {mu}m, while the commercialization of DXRL goes in the direction of massive automation, including parallel exposures of several samples in a very wide SR-fan, developing and inspection.

Authors:
 [1]
  1. Forschungszentrum Karlsruhe GmbH, Institut fuer Mikrostrukturtechnik, Postfach 3640, D- 76021 Karlsruhe (Germany)
Publication Date:
OSTI Identifier:
21049300
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 879; Journal Issue: 1; Conference: 9. international conference on synchrotron radiation instrumentation, Daegu (Korea, Republic of), 28 May - 2 Jun 2006; Other Information: DOI: 10.1063/1.2436339; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ADHESION; AUTOMATION; FABRICATION; HARD X RADIATION; HEATING LOAD; KEV RANGE; MASKING; MICROSTRUCTURE; MIRRORS; SYNCHROTRON RADIATION; THERMAL EXPANSION

Citation Formats

Pantenburg, F. J. Instrumentation for Microfabrication with Deep X-ray Lithography. United States: N. p., 2007. Web. doi:10.1063/1.2436339.
Pantenburg, F. J. Instrumentation for Microfabrication with Deep X-ray Lithography. United States. doi:10.1063/1.2436339.
Pantenburg, F. J. Fri . "Instrumentation for Microfabrication with Deep X-ray Lithography". United States. doi:10.1063/1.2436339.
@article{osti_21049300,
title = {Instrumentation for Microfabrication with Deep X-ray Lithography},
author = {Pantenburg, F. J.},
abstractNote = {Deep X-ray lithography for microfabrication is performed at least at ten synchrotron radiation centers worldwide. The characteristic energies of these sources range from 1.4 keV up to 8 keV, covering mask making capabilities, deep X-ray lithography up to ultra deep x-ray lithography of several millimeters resist thickness. Limitations in deep X-ray lithography arise from hard X-rays in the SR-spectrum leading to adhesion losses of resist lines after the developing process, as well as heat load due to very high fluxes leading to thermal expansion of mask and resist during exposure and therefore to microstructure distortion. Considering the installations at ANKA as an example, the advantages of mirrors and central beam stops for DXRL are presented. Future research work will concentrate on feature sizes much below 1 {mu}m, while the commercialization of DXRL goes in the direction of massive automation, including parallel exposures of several samples in a very wide SR-fan, developing and inspection.},
doi = {10.1063/1.2436339},
journal = {AIP Conference Proceedings},
number = 1,
volume = 879,
place = {United States},
year = {Fri Jan 19 00:00:00 EST 2007},
month = {Fri Jan 19 00:00:00 EST 2007}
}