Effects of Mg doping on the properties of highly transparent conductive and near infrared reflective Zn{sub 1-x}Mg{sub x}O:Ga films
- State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027 (China)
Highly transparent conductive and near infrared (IR) reflective Gallium-doped ZnMgO (Zn{sub 1-x}Mg{sub x}O:Ga) films with Mg content from 0 to 10 at% were deposited on glass substrate by DC reactive magnetron sputtering. X-ray diffraction shows all the ZnMgO:Ga films are polycrystalline and have wurtzite structure with a preferential c-axis orientation. Hall measurements indicate that the resistivity of these films obviously increases with the Mg concentration increasing. The average transmittance of Zn{sub 1-x}Mg{sub x}O:Ga films is over 90% in the visible range. All the Zn{sub 1-x}Mg{sub x}O:Ga films have low transmittance and high reflectance in the IR region. - Graphical abstract: The figure shows transmittance and reflectance spectra of Zn{sub 1-x}Mg{sub x}O:Ga films measured in the wavelength range of 300-2500 nm. In the visible region the films are highly transparent, and their spectra are like those of dielectrics regardless of Mg content. In the IR region the films behave like metals and have high reflectance and low transmittance.
- OSTI ID:
- 21043920
- Journal Information:
- Journal of Solid State Chemistry, Vol. 181, Issue 3; Other Information: DOI: 10.1016/j.jssc.2007.12.032; PII: S0022-4596(08)00011-X; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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