Dopant profiling in the TEM, progress towards quantitative electron holography
Journal Article
·
· AIP Conference Proceedings
- CEA LETI, Minatec, 17 rue des Martyrs, Cedex 9, 38054 Grenoble (France)
- Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)
Off-axis electron holography has been used to characterise the dopant potential in GaAs p-n junctions. We show that the measured potential across the junctions is affected by both FIB specimen preparation and by charging in the TEM and suggest methods that can be used to minimise these problems.
- OSTI ID:
- 21032729
- Journal Information:
- AIP Conference Proceedings, Vol. 931, Issue 1; Conference: 2007 international conference on frontiers of characterization and metrology, Gaithersburg, MD (United States), 27-29 Mar 2007; Other Information: DOI: 10.1063/1.2799424; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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