Silicon loss metrology using synchrotron x-ray reflectance and Bragg diffraction

Bhargava, Mansi; Wolfe, John C; Donner, Wolfgang; Srivastava, Aseem

doi:10.1063/1.2799369

Title: Silicon loss metrology using synchrotron x-ray reflectance and Bragg diffraction

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Abstract

We use synchrotron x-ray reflectometry and Bragg diffraction to study silicon loss in the low temperature plasma oxidation of silicon-on-insulator (SOI) wafers. We show that Laue oscillations associated with the Si (004) Bragg peak give the number of Si (004) planes in the device layer to within an experimental error of 0.07 nm and that X-ray reflectometry gives the total thickness of the device layer and the surface oxide to within 0.05 nm. We find that silicon loss in samples processed in two different plasma systems correspond to an increase in total thickness that is consistent with the formation of SiO{sub 2}.

Authors:

Bhargava, Mansi; Wolfe, John C ^[1]; Donner, Wolfgang ^[2]; Srivastava, Aseem ^[3]

Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204 (United States)
Department of Physics, University of Houston, Houston, TX 77204-5005 (United States)
Axcelis Technologies, 108 Cherry Hill Drive, Beverly, MA 01915 (United States)

Publication Date:: Wed Sep 26 00:00:00 EDT 2007

OSTI Identifier:: 21032713

Resource Type:: Journal Article

Journal Name:: AIP Conference Proceedings

Additional Journal Information:: Journal Volume: 931; Journal Issue: 1; Conference: 2007 international conference on frontiers of characterization and metrology, Gaithersburg, MD (United States), 27-29 Mar 2007; Other Information: DOI: 10.1063/1.2799369; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; BRAGG CURVE; BRAGG REFLECTION; LAYERS; OSCILLATIONS; OXIDATION; PLASMA; SILICON; SILICON OXIDES; SURFACES; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION

Citation Formats


                    Bhargava, Mansi, Wolfe, John C, Nanosystem Manufacturing Center, University of Houston, Houston, TX 77204, Donner, Wolfgang, and Srivastava, Aseem. Silicon loss metrology using synchrotron x-ray reflectance and Bragg diffraction.  United States: N. p., 2007. 
        Web.  doi:10.1063/1.2799369.

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                    Bhargava, Mansi, Wolfe, John C, Nanosystem Manufacturing Center, University of Houston, Houston, TX 77204, Donner, Wolfgang, & Srivastava, Aseem. Silicon loss metrology using synchrotron x-ray reflectance and Bragg diffraction.  United States.  https://doi.org/10.1063/1.2799369

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                    Bhargava, Mansi, Wolfe, John C, Nanosystem Manufacturing Center, University of Houston, Houston, TX 77204, Donner, Wolfgang, and Srivastava, Aseem. 2007.  
        "Silicon loss metrology using synchrotron x-ray reflectance and Bragg diffraction".  United States.  https://doi.org/10.1063/1.2799369.

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@article{osti_21032713,

  title        = {Silicon loss metrology using synchrotron x-ray reflectance and Bragg diffraction},

  author       = {Bhargava, Mansi and Wolfe, John C and Nanosystem Manufacturing Center, University of Houston, Houston, TX 77204 and Donner, Wolfgang and Srivastava, Aseem},

  abstractNote = {We use synchrotron x-ray reflectometry and Bragg diffraction to study silicon loss in the low temperature plasma oxidation of silicon-on-insulator (SOI) wafers. We show that Laue oscillations associated with the Si (004) Bragg peak give the number of Si (004) planes in the device layer to within an experimental error of 0.07 nm and that X-ray reflectometry gives the total thickness of the device layer and the surface oxide to within 0.05 nm. We find that silicon loss in samples processed in two different plasma systems correspond to an increase in total thickness that is consistent with the formation of SiO{sub 2}.},

  doi          = {10.1063/1.2799369},

  url          = {https://www.osti.gov/biblio/21032713},
  journal      = {AIP Conference Proceedings},

  issn         = {0094-243X},

  number       = 1,

  volume       = 931,

  place        = {United States},

  year         = {Wed Sep 26 00:00:00 EDT 2007},

  month        = {Wed Sep 26 00:00:00 EDT 2007}

}

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