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Title: Chemical Mechanical Planarization (CMP) Metrology for 45/32 nm Technology Generations

Abstract

In-plane geometrical defects on wafer surfaces following Chemical Mechanical Planarization (CMP) processing in the lateral millimeter range and in vertical dimensions in the nanometer range are of increasing importance. They will become a severe yield limiting factor in the 32 nm generations and below. At the wafer edge these defects are known as edge roll off (ERO). The feasibility of measuring flatness and geometry of bare silicon wafers and patterned wafers from different process steps as e.g. shallow trench isolation (STI) and interconnect metallization was successfully demonstrated using wave front sensing. The used wave front sensing methods were according to Makyoh and Shack Hartmann. The specifications achieved were for the Makyoh method a lateral resolution of 2.4 mm and for Shack Hartmann method 1.1 mm. The vertical resolution was 100 nm for the Makyoh method and 50 nm for the Shack Hartmann method.

Authors:
;  [1]
  1. Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany)
Publication Date:
OSTI Identifier:
21032710
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 931; Journal Issue: 1; Conference: 2007 international conference on frontiers of characterization and metrology, Gaithersburg, MD (United States), 27-29 Mar 2007; Other Information: DOI: 10.1063/1.2799365; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL DEFECTS; MECHANICAL POLISHING; NANOSTRUCTURES; PROCESSING; SENSORS; SILICON; SURFACES

Citation Formats

Nutsch, A, and Pfitzner, L. Chemical Mechanical Planarization (CMP) Metrology for 45/32 nm Technology Generations. United States: N. p., 2007. Web. doi:10.1063/1.2799365.
Nutsch, A, & Pfitzner, L. Chemical Mechanical Planarization (CMP) Metrology for 45/32 nm Technology Generations. United States. https://doi.org/10.1063/1.2799365
Nutsch, A, and Pfitzner, L. 2007. "Chemical Mechanical Planarization (CMP) Metrology for 45/32 nm Technology Generations". United States. https://doi.org/10.1063/1.2799365.
@article{osti_21032710,
title = {Chemical Mechanical Planarization (CMP) Metrology for 45/32 nm Technology Generations},
author = {Nutsch, A and Pfitzner, L},
abstractNote = {In-plane geometrical defects on wafer surfaces following Chemical Mechanical Planarization (CMP) processing in the lateral millimeter range and in vertical dimensions in the nanometer range are of increasing importance. They will become a severe yield limiting factor in the 32 nm generations and below. At the wafer edge these defects are known as edge roll off (ERO). The feasibility of measuring flatness and geometry of bare silicon wafers and patterned wafers from different process steps as e.g. shallow trench isolation (STI) and interconnect metallization was successfully demonstrated using wave front sensing. The used wave front sensing methods were according to Makyoh and Shack Hartmann. The specifications achieved were for the Makyoh method a lateral resolution of 2.4 mm and for Shack Hartmann method 1.1 mm. The vertical resolution was 100 nm for the Makyoh method and 50 nm for the Shack Hartmann method.},
doi = {10.1063/1.2799365},
url = {https://www.osti.gov/biblio/21032710}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 931,
place = {United States},
year = {Wed Sep 26 00:00:00 EDT 2007},
month = {Wed Sep 26 00:00:00 EDT 2007}
}