Negative Decaborane Ion Beam from ITEP Bernas Ion Source

Journal Article · Fri Aug 10 00:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2773671· OSTI ID:21032665

Petrenko, S V; Kuibeda, R P; Kulevoy, T V; Batalin, V A; Pershin, V I; Koslov, A V; Stasevich, Yu B; Koshelev, V A ^[1]; Hershcovitch, A; Johnson, B M ^[2]; Oks, E M; Gushenets, V I ^[3]; Poole, H J ^[4]

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1. Institute for Theoretical and Experimental Physics, Moscow, (Russian Federation)
2. Brookhaven National Laboratory, Upton, New York 11973 (United States)
3. High Current Electronics Institute Russian Academy of Sciences, Tomsk, 634055 (Russian Federation)
4. PVI, Oxnard, California 93031-5023 (United States)

A joint research and development effort focusing on the design of steady state, intense ion sources has been in progress for the past two and a half years with a couple of Russian institutions. The ultimate goal of the effort is to meet the two, energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of higher charge state antimony and phosphorous ions to meet high-energy implantation requirements. For low energy ion implantation, R and D efforts have involved molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive decaborane ions were extracted at 10 keV and a smaller current of negative decaborane ions were also extracted. Though of scientific interest, negative decaborane ions did not attract interest from industry, since the semiconductor ion implant industry seems to have solved the wafer-charging problem. This paper describes conditions under which negative decaborane ions are formed and extracted from a Bernas ion source.

• OSTI ID: 21032665
• Journal Information: AIP Conference Proceedings, Vol. 925, Issue 1; Conference: 11. international symposium on the production and neutralization of negative ions and beams, Santa Fe, NM (United States), 13-15 Sep 2006; Other Information: DOI: 10.1063/1.2773671; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACCELERATION
ANTIMONY IONS
CHARGE STATES
DESIGN
ELECTRIC CURRENTS
ELECTRONS
ION BEAMS
ION IMPLANTATION
ION SOURCES
KEV RANGE
MOLECULAR IONS
PHOSPHORUS IONS
SEMICONDUCTOR MATERIALS
STEADY-STATE CONDITIONS