Effect of wall conditions on the self-limiting deposition of metal oxides by pulsed plasma-enhanced chemical vapor deposition
- Department of Chemical Engineering, Colorado School of Mines, Golden, Colorado 80401 (United States)
Pulsed plasma-enhanced chemical vapor deposition has been engineered to deliver self-limiting growth (i.e., {approx}A /pulse) of metal oxides such as Ta{sub 2}O{sub 5} and Al{sub 2}O{sub 3}. In this process the reactor walls are alternately exposed to atomic oxygen and metal precursors. The degree of adsorption in the latter step can dramatically influence both deposition rates and film quality. The impact of precursor adsorption on the plasma and gas-phase composition in these systems was quantified using optical emission spectroscopy and quadrupole mass spectrometry, respectively. It is shown that the time scale for a complete adsorption on the chamber walls is much greater than gas-phase residence times. Adsorbed compounds significantly alter the reactor composition, particularly at the initiation of each plasma pulse. As a consequence, careful attention must be paid to reactor design and operation to control deposition rates and maintain film quality.
- OSTI ID:
- 21020881
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 25, Issue 6; Other Information: DOI: 10.1116/1.2779039; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
Similar Records
Self-limiting deposition of aluminum oxide thin films by pulsed plasma-enhanced chemical vapor deposition
SrTa{sub 2}O{sub 6} thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates