Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films
- Institute of Energy Conversion, University of Delaware, 451 Wyoming Rd., Newark, Delaware 19716 (United States)
The structure of hydrogenated silicon (Si:H) films deposited by rf and dc plasma process on Si (100) and (111) wafers is correlated with the surface passivation quality and heterojunction cell performance. Microstructural defects associated with SiH{sub 2} bonding and apparent ion bombardment in dc plasmas have little or no adverse effect on passivation or cell properties, while presence of crystallinity in Si:H i layer severely deteriorates surface passivation and cell open circuit voltage (V{sub oc}). Excellent surface passivation (lifetime of >1 ms) and high efficiency cells (>18%) with V{sub oc} of 694 mV are demonstrated on n-type textured Czochralski wafer using dc plasma process.
- OSTI ID:
- 21016342
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 6; Other Information: DOI: 10.1063/1.2857465; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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