Near-zero IR transmission in the metal-insulator transition of VO{sub 2} thin films
- Thin Films and Photonics Research Group (GCMP), Department of Physics and Astronomy, Universite de Moncton, Moncton, New Brunswick E1A 3E9 (Canada)
Vanadium dioxide films have been prepared with different thicknesses using radio-frequency magnetron sputtering technique followed by postdeposition annealing in oxygen ambient. Films with a thickness of 300 nm show a switching efficiency of {approx}74% and most importantly with a near-zero infrared transmission in the switched state. As the film thickness decreases, the inherent transmission in the switched state increases along with reduced switching efficiencies.
- OSTI ID:
- 21016277
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 2; Other Information: DOI: 10.1063/1.2834367; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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