Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy

Journal Article · Mon Jan 07 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2830332· OSTI ID:21016259

Enta, Yoshiharu; Mun, Bongjin S; Rossi, Massimiliano; Ross, Jr, Philip N; Hussain, Zahid; Fadley, Charles S; Lee, Ki-Suk; Kim, Sang-Koog ^[1]

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1. Faculty of Science and Technology, Hirosaki University, 3 Bunkyo-cho, Hirosaki 036-8561 (Japan)

We have applied ambient-pressure x-ray photoelectron spectroscopy with Si 2p chemical shifts to study the real-time dry oxidation of Si(100), using pressures in the range of 0.01-1 Torr and temperatures of 300-530 deg. C, and examining the oxide thickness range from 0 to {approx}25 A. The oxidation rate is initially very high (with rates of up to {approx}225 A/h) and then, after a certain initial thickness of the oxide in the range of 6-22 A is formed, decreases to a slow state (with rates of {approx}1.5-4.0 A/h). Neither the rapid nor the slow regime is explained by the standard Deal-Grove model for Si oxidation.

• OSTI ID: 21016259
• Journal Information: Applied Physics Letters, Vol. 92, Issue 1; Other Information: DOI: 10.1063/1.2830332; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL SHIFT
OXIDATION
OXIDES
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
X-RAY PHOTOELECTRON SPECTROSCOPY