High-Q GaN nanowire resonators and oscillators

Journal Article · Mon Nov 12 00:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2815747· OSTI ID:21016246

Tanner, S M; Gray, J M; Rogers, C T; Bertness, K A; Sanford, N A ^[1]

---

1. Department of Physics, Colorado, CB390, University of Colorado, Boulder, Colorado 80309-0390 (United States)

We report high mechanical quality factors Q for GaN nanowire cantilevers grown by molecular beam epitaxy. Nanowires with 30-500 nm diameters and 5-20 {mu}m lengths having resonance frequencies from 400 kHz to 2.8 MHz were measured. Q near room temperature and 10{sup -4} Pa ranged from 2700 to above 60 000 with most above 10 000. Positive feedback to a piezoelectric stack caused spontaneous nanowire oscillations with Q exceeding 10{sup 6}. Spontaneous oscillations also occurred with direct e-beam excitation of unintentionally doped nanowires. Doped nanowires showed no oscillations, consistent with oscillation arising via direct actuation of piezoelectric GaN.

• OSTI ID: 21016246
• Journal Information: Applied Physics Letters, Vol. 91, Issue 20; Other Information: DOI: 10.1063/1.2815747; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRON BEAMS
GALLIUM NITRIDES
KHZ RANGE 100-1000
MHZ RANGE 01-100
MOLECULAR BEAM EPITAXY
OSCILLATIONS
OSCILLATORS
PIEZOELECTRICITY
PRESSURE DEPENDENCE
PRESSURE RANGE MICRO PA
QUALITY FACTOR
QUANTUM WIRES
RESONATORS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K