Effect of photon irradiation on structure of yttria-doped zirconia thin films grown on semiconductor substrates
- Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)
Structural changes and atomic-scale interfacial phenomena induced by room temperature ultraviolet (UV) irradiation on yttria-doped zirconia (YDZ) thin films grown on semiconductor substrates have been investigated in detail. Interfacial layer formation, film densification, and changes in crystallinity were observed in films grown on Si, while there was minimal difference in films grown on Ge. No significant grain growth and phase transformation were observed, suggesting that cation related kinetics remains unperturbed under UV exposure. The formation of interfacial layers thicker than room temperature self-limiting thickness suggests that effective local field for oxygen vacancies inside the YDZ film was affected by photon illumination.
- OSTI ID:
- 21016228
- Journal Information:
- Applied Physics Letters, Vol. 91, Issue 25; Other Information: DOI: 10.1063/1.2825567; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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