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Title: Resistive switching properties of high crystallinity and low-resistance Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} thin film with point-contacted Ag electrodes

Abstract

A high-crystallinity, low-resistance Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3}(PCMO) thin film deposited by sputtering at 600 deg. C showed no resistive switching with a Pt/Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3}/Pt structure but a remarkable bipolar resistive switching with a Ag paste/Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3}/Pt structure. Observed retention fatigue of the low-resistance state was almost saturated after 24 h. The resistive switching properties were characterized as point contact of Ag grains to PCMO thin film. It was also found that the interface can form interfacial trap states and resistive change active layers. This strongly suggests that the function of the Ag point contact is similar to those of the previously proposed filament path and the nanodomain switch.

Authors:
; ; ;  [1]
  1. Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Jyouhoku, Hamamatsu, Shizuoka 432-8561 (Japan)
Publication Date:
OSTI Identifier:
21016190
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 91; Journal Issue: 22; Other Information: DOI: 10.1063/1.2816124; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CALCIUM COMPOUNDS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRODES; FATIGUE; FILAMENTS; LAYERS; MANGANATES; PLATINUM; PRASEODYMIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SILVER; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS

Citation Formats

Fujimoto, Masayuki, Koyama, Hiroshi, Nishi, Yuji, Suzuki, Toshimasa, and Taiyo Yuden Company 5607-2 Haruna-machi, Gunma, Gunma 370-3347. Resistive switching properties of high crystallinity and low-resistance Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} thin film with point-contacted Ag electrodes. United States: N. p., 2007. Web. doi:10.1063/1.2816124.
Fujimoto, Masayuki, Koyama, Hiroshi, Nishi, Yuji, Suzuki, Toshimasa, & Taiyo Yuden Company 5607-2 Haruna-machi, Gunma, Gunma 370-3347. Resistive switching properties of high crystallinity and low-resistance Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} thin film with point-contacted Ag electrodes. United States. doi:10.1063/1.2816124.
Fujimoto, Masayuki, Koyama, Hiroshi, Nishi, Yuji, Suzuki, Toshimasa, and Taiyo Yuden Company 5607-2 Haruna-machi, Gunma, Gunma 370-3347. Mon . "Resistive switching properties of high crystallinity and low-resistance Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} thin film with point-contacted Ag electrodes". United States. doi:10.1063/1.2816124.
@article{osti_21016190,
title = {Resistive switching properties of high crystallinity and low-resistance Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} thin film with point-contacted Ag electrodes},
author = {Fujimoto, Masayuki and Koyama, Hiroshi and Nishi, Yuji and Suzuki, Toshimasa and Taiyo Yuden Company 5607-2 Haruna-machi, Gunma, Gunma 370-3347},
abstractNote = {A high-crystallinity, low-resistance Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3}(PCMO) thin film deposited by sputtering at 600 deg. C showed no resistive switching with a Pt/Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3}/Pt structure but a remarkable bipolar resistive switching with a Ag paste/Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3}/Pt structure. Observed retention fatigue of the low-resistance state was almost saturated after 24 h. The resistive switching properties were characterized as point contact of Ag grains to PCMO thin film. It was also found that the interface can form interfacial trap states and resistive change active layers. This strongly suggests that the function of the Ag point contact is similar to those of the previously proposed filament path and the nanodomain switch.},
doi = {10.1063/1.2816124},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 91,
place = {United States},
year = {2007},
month = {11}
}