Band offsets between amorphous LaAlO{sub 3} and In{sub 0.53}Ga{sub 0.47}As

Journal Article · Mon Sep 10 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2783264· OSTI ID:21016155

Goel, N; Tsai, W; Garner, C M; Sun, Y; Pianetta, P; Warusawithana, M; Schlom, D G; Wen, H; Gaspe, C; Keay, J C; Santos, M B; Goncharova, L V; Garfunkel, E; Gustafsson, T ^[1]

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1. Intel Corporation, Santa Clara, California 95052 (United States)

The band offsets between an amorphous LaAlO{sub 3} dielectric prepared by molecular-beam deposition and a n-type In{sub 0.53}Ga{sub 0.47}As (001) layer have been measured using synchrotron radiation photoemission spectroscopy. The valence and conduction band offsets at the postdeposition annealed LaAlO{sub 3}/InGaAs interface are 3.1{+-}0.1 and 2.35{+-}0.2 eV, respectively. The band gap of LaAlO{sub 3}, as determined by Al 2p and O 1s core level energy loss spectra, is 6.2{+-}0.1 eV. Within the resolution of the medium energy ion scattering technique, no interfacial oxide layer is seen between the InGaAs and the 3.6 nm thick amorphous LaAlO{sub 3}.

• OSTI ID: 21016155
• Journal Information: Applied Physics Letters, Vol. 91, Issue 11; Other Information: DOI: 10.1063/1.2783264; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINATES
ANNEALING
CRYSTAL GROWTH
DEPOSITION
DIELECTRIC MATERIALS
ELECTRONS
ENERGY GAP
ENERGY-LOSS SPECTROSCOPY
GALLIUM ARSENIDES
INDIUM ARSENIDES
LANTHANUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
OXIDES
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
SCATTERING
SEMICONDUCTOR MATERIALS
SYNCHROTRON RADIATION