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Title: Effects of different plasma species (atomic N, metastable N{sub 2}*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy

Abstract

This letter studies the effects of atomic N, metastable N{sub 2}*, and ionic species on the optical properties of dilute nitride materials. Ga{sub 0.8}In{sub 0.2}N{sub 0.01}As{sub 0.99} was grown using a 1% N{sub 2} in Ar gas mix from an Applied-Epi Unibulb rf plasma source. Isonitrogen samples with and without ions were studied using various plasma operating conditions. Optical emission spectrometry was used to characterize relative proportions of different active nitrogen plasma species (atomic N and metastable N{sub 2}*). Samples grown without ions and with a higher proportion of atomic N resulted in the best overall material quality, although this improvement was observed at high annealing temperatures. At lower annealing temperatures, increased blueshifts were observed for samples grown with a higher proportion of atomic N; however, there was no noticeable influence of ions on blueshift regardless of whether atomic N or metastable N{sub 2}* was the dominant species present in the plasma. The key implication of this work is that it helps to elucidate a possible reason for some of the contradictory reports in the literature. The ions are not solely responsible for the commonly reported ''plasma damage.'' Furthermore, we demonstrate herein that atomic N and metastable N{sub 2}* eachmore » have different effects on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy.« less

Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)
Publication Date:
OSTI Identifier:
21016140
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 91; Journal Issue: 19; Other Information: DOI: 10.1063/1.2806226; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GALLIUM ARSENIDES; GALLIUM NITRIDES; INDIUM ARSENIDES; INDIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT

Citation Formats

Oye, Michael M, Mattord, Terry J, Hallock, Gary A, Bank, Seth R, Wistey, Mark A, Reifsnider, Jason M, Ptak, Aaron J, Yuen, Homan B, Harris, Jr, James S, Holmes, Jr, Archie L, Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, Samsung Austin Semiconductor, 12100 Samsung Blvd., Austin, Texas 78754, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colarado 80401, Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305, and Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904. Effects of different plasma species (atomic N, metastable N{sub 2}*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy. United States: N. p., 2007. Web. doi:10.1063/1.2806226.
Oye, Michael M, Mattord, Terry J, Hallock, Gary A, Bank, Seth R, Wistey, Mark A, Reifsnider, Jason M, Ptak, Aaron J, Yuen, Homan B, Harris, Jr, James S, Holmes, Jr, Archie L, Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, Samsung Austin Semiconductor, 12100 Samsung Blvd., Austin, Texas 78754, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colarado 80401, Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305, & Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904. Effects of different plasma species (atomic N, metastable N{sub 2}*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy. United States. https://doi.org/10.1063/1.2806226
Oye, Michael M, Mattord, Terry J, Hallock, Gary A, Bank, Seth R, Wistey, Mark A, Reifsnider, Jason M, Ptak, Aaron J, Yuen, Homan B, Harris, Jr, James S, Holmes, Jr, Archie L, Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, Samsung Austin Semiconductor, 12100 Samsung Blvd., Austin, Texas 78754, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colarado 80401, Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305, and Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904. Mon . "Effects of different plasma species (atomic N, metastable N{sub 2}*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy". United States. https://doi.org/10.1063/1.2806226.
@article{osti_21016140,
title = {Effects of different plasma species (atomic N, metastable N{sub 2}*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy},
author = {Oye, Michael M and Mattord, Terry J and Hallock, Gary A and Bank, Seth R and Wistey, Mark A and Reifsnider, Jason M and Ptak, Aaron J and Yuen, Homan B and Harris, Jr, James S and Holmes, Jr, Archie L and Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106 and Samsung Austin Semiconductor, 12100 Samsung Blvd., Austin, Texas 78754 and National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colarado 80401 and Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305 and Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904},
abstractNote = {This letter studies the effects of atomic N, metastable N{sub 2}*, and ionic species on the optical properties of dilute nitride materials. Ga{sub 0.8}In{sub 0.2}N{sub 0.01}As{sub 0.99} was grown using a 1% N{sub 2} in Ar gas mix from an Applied-Epi Unibulb rf plasma source. Isonitrogen samples with and without ions were studied using various plasma operating conditions. Optical emission spectrometry was used to characterize relative proportions of different active nitrogen plasma species (atomic N and metastable N{sub 2}*). Samples grown without ions and with a higher proportion of atomic N resulted in the best overall material quality, although this improvement was observed at high annealing temperatures. At lower annealing temperatures, increased blueshifts were observed for samples grown with a higher proportion of atomic N; however, there was no noticeable influence of ions on blueshift regardless of whether atomic N or metastable N{sub 2}* was the dominant species present in the plasma. The key implication of this work is that it helps to elucidate a possible reason for some of the contradictory reports in the literature. The ions are not solely responsible for the commonly reported ''plasma damage.'' Furthermore, we demonstrate herein that atomic N and metastable N{sub 2}* each have different effects on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy.},
doi = {10.1063/1.2806226},
url = {https://www.osti.gov/biblio/21016140}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 91,
place = {United States},
year = {2007},
month = {11}
}