Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN

Journal Article · Mon Aug 27 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2776866· OSTI ID:21016115

Lopatiuk-Tirpak, O; Chernyak, L; Wang, Y L; Ren, F; Pearton, S J; Gartsman, K ^[1]

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1. University of Central Florida, Orlando, Florida 32816-2385 (United States)

The electron irradiation-induced increase of minority carrier diffusion length was studied as a function of hole concentration in Mg-doped GaN. Variable-temperature electron beam induced current measurements yielded activation energies of 264, 254, 171, and 144 meV for samples with hole concentrations of 2x10{sup 16}, 9x10{sup 16}, 3x10{sup 18}, and 7x10{sup 18} cm{sup -3}, respectively. This carrier concentration dependence of the activation energy for the effects of electron irradiation was found to be consistent with Mg acceptors, indicating the involvement of the latter levels in the irradiation-induced diffusion length increase.

• OSTI ID: 21016115
• Journal Information: Applied Physics Letters, Vol. 91, Issue 9; Other Information: DOI: 10.1063/1.2776866; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CARRIER LIFETIME
CHARGE CARRIERS
DIFFUSION LENGTH
DOPED MATERIALS
ELECTRON BEAMS
ELECTRON TEMPERATURE
ELECTRONS
GALLIUM NITRIDES
HOLES
IRRADIATION
MAGNESIUM
MEV RANGE 100-1000
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS