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Title: Strain-induced single-domain growth of epitaxial SrRuO{sub 3} layers on SrTiO{sub 3}: A high-temperature x-ray diffraction study

Abstract

Temperature dependent structural phase transitions of SrRuO{sub 3} thin films epitaxially grown on SrTiO{sub 3}(001) single crystal substrates have been studied using high-resolution x-ray diffraction. In contrast to bulk SrRuO{sub 3}, coherently strained epitaxial layers do not display cubic symmetry up to {approx}730 deg. C and remain tetragonal. The cause of this behavior is believed to be the compressive strain in the SrRuO{sub 3} layer due to the lattice mismatch with SrTiO{sub 3} substrate due to lattice mismatch. The tetragonal symmetry during growth explains the single domain growth on miscut SrTiO{sub 3} substrates with step edges running along the [100] or [010] direction.

Authors:
; ;  [1];  [2];  [3]
  1. Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 and X-ray Laboratory for Advanced Materials, Stanford Linear Accelerator Center, Menlo Park, California 94025 (United States)
  2. (United States)
  3. (Netherlands) and MESA Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)
Publication Date:
OSTI Identifier:
21016097
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 91; Journal Issue: 7; Other Information: DOI: 10.1063/1.2771087; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL DEFECTS; CRYSTAL GROWTH; ENERGY BEAM DEPOSITION; LASER RADIATION; LAYERS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; PHASE TRANSFORMATIONS; PULSED IRRADIATION; RESIDUAL STRESSES; RUBIDIUM OXIDES; STRONTIUM TITANATES; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Vailionis, Arturas, Siemons, Wolter, Koster, Gertjan, Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, and Faculty of Science and Technology, University of Twente, 7500 AE Enschede. Strain-induced single-domain growth of epitaxial SrRuO{sub 3} layers on SrTiO{sub 3}: A high-temperature x-ray diffraction study. United States: N. p., 2007. Web. doi:10.1063/1.2771087.
Vailionis, Arturas, Siemons, Wolter, Koster, Gertjan, Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, & Faculty of Science and Technology, University of Twente, 7500 AE Enschede. Strain-induced single-domain growth of epitaxial SrRuO{sub 3} layers on SrTiO{sub 3}: A high-temperature x-ray diffraction study. United States. doi:10.1063/1.2771087.
Vailionis, Arturas, Siemons, Wolter, Koster, Gertjan, Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, and Faculty of Science and Technology, University of Twente, 7500 AE Enschede. Mon . "Strain-induced single-domain growth of epitaxial SrRuO{sub 3} layers on SrTiO{sub 3}: A high-temperature x-ray diffraction study". United States. doi:10.1063/1.2771087.
@article{osti_21016097,
title = {Strain-induced single-domain growth of epitaxial SrRuO{sub 3} layers on SrTiO{sub 3}: A high-temperature x-ray diffraction study},
author = {Vailionis, Arturas and Siemons, Wolter and Koster, Gertjan and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 and Faculty of Science and Technology, University of Twente, 7500 AE Enschede},
abstractNote = {Temperature dependent structural phase transitions of SrRuO{sub 3} thin films epitaxially grown on SrTiO{sub 3}(001) single crystal substrates have been studied using high-resolution x-ray diffraction. In contrast to bulk SrRuO{sub 3}, coherently strained epitaxial layers do not display cubic symmetry up to {approx}730 deg. C and remain tetragonal. The cause of this behavior is believed to be the compressive strain in the SrRuO{sub 3} layer due to the lattice mismatch with SrTiO{sub 3} substrate due to lattice mismatch. The tetragonal symmetry during growth explains the single domain growth on miscut SrTiO{sub 3} substrates with step edges running along the [100] or [010] direction.},
doi = {10.1063/1.2771087},
journal = {Applied Physics Letters},
number = 7,
volume = 91,
place = {United States},
year = {Mon Aug 13 00:00:00 EDT 2007},
month = {Mon Aug 13 00:00:00 EDT 2007}
}