Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate

Journal Article · Mon Aug 06 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2766963· OSTI ID:21016090

Gao, J R; Hajenius, M; Tichelaar, F D; Klapwijk, T M; Voronov, B; Grishin, E; Gol'tsman, G; Zorman, C A; Mehregany, M ^[1]

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1. SRON Netherlands Institute for Space Research, Sorbonnelaan 2 3584 CA Utrecht (Netherlands) and Kavli Institute of NanoScience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft (Netherlands)

The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800 deg. C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4 to 4.1 nm shows a superconducting transition temperature of 11.8 K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.

• OSTI ID: 21016090
• Journal Information: Applied Physics Letters, Vol. 91, Issue 6; Other Information: DOI: 10.1063/1.2766963; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
EPITAXY
LAYERS
MONOCRYSTALS
NANOSTRUCTURES
NIOBIUM NITRIDES
SILICON
SILICON CARBIDES
SPUTTERING
SUBSTRATES
SUPERCONDUCTING FILMS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TRANSITION TEMPERATURE
TRANSMISSION ELECTRON MICROSCOPY