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Title: Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate

Abstract

The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800 deg. C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4 to 4.1 nm shows a superconducting transition temperature of 11.8 K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.

Authors:
; ; ; ; ; ; ; ;  [1]
  1. SRON Netherlands Institute for Space Research, Sorbonnelaan 2 3584 CA Utrecht (Netherlands) and Kavli Institute of NanoScience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft (Netherlands)
Publication Date:
OSTI Identifier:
21016090
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 91; Journal Issue: 6; Other Information: DOI: 10.1063/1.2766963; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; EPITAXY; LAYERS; MONOCRYSTALS; NANOSTRUCTURES; NIOBIUM NITRIDES; SILICON; SILICON CARBIDES; SPUTTERING; SUBSTRATES; SUPERCONDUCTING FILMS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; TRANSITION TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Gao, J R, Hajenius, M, Tichelaar, F D, Klapwijk, T M, Voronov, B, Grishin, E, Gol'tsman, G, Zorman, C A, Mehregany, M, Kavli Institute of NanoScience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, Department of Physics, Moscow State Pedagogical University, and Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106. Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate. United States: N. p., 2007. Web. doi:10.1063/1.2766963.
Gao, J R, Hajenius, M, Tichelaar, F D, Klapwijk, T M, Voronov, B, Grishin, E, Gol'tsman, G, Zorman, C A, Mehregany, M, Kavli Institute of NanoScience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, Department of Physics, Moscow State Pedagogical University, & Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106. Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate. United States. https://doi.org/10.1063/1.2766963
Gao, J R, Hajenius, M, Tichelaar, F D, Klapwijk, T M, Voronov, B, Grishin, E, Gol'tsman, G, Zorman, C A, Mehregany, M, Kavli Institute of NanoScience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, Department of Physics, Moscow State Pedagogical University, and Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106. Mon . "Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate". United States. https://doi.org/10.1063/1.2766963.
@article{osti_21016090,
title = {Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate},
author = {Gao, J R and Hajenius, M and Tichelaar, F D and Klapwijk, T M and Voronov, B and Grishin, E and Gol'tsman, G and Zorman, C A and Mehregany, M and Kavli Institute of NanoScience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft and Department of Physics, Moscow State Pedagogical University and Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106},
abstractNote = {The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800 deg. C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4 to 4.1 nm shows a superconducting transition temperature of 11.8 K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.},
doi = {10.1063/1.2766963},
url = {https://www.osti.gov/biblio/21016090}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 6,
volume = 91,
place = {United States},
year = {2007},
month = {8}
}