Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations
Abstract
The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p{sup 6}nln{sup '}l{sup '} dielectronic recombination (DR) resonances associated with 3s{yields}nl core excitations, 2s2p{sup 6}3snln{sup '}l{sup '} resonances associated with 2s{yields}nl (n=3,4) core excitations, and 2p{sup 5}3snln{sup '}l{sup '} resonances associated with 2p{yields}nl (n=3,...,{infinity}) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s{yields}3pn{sup '}l{sup '} and 3s{yields}3dn{sup '}l{sup '}(both n{sup '}=3,...,6) and 2p{sup 5}3s3ln{sup '}l{sup '} (n{sup '}=3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.
- Authors:
-
- Institut fuer Atom- und Molekuelphysik, Justus-Liebig-Universitaet, Leihgesterner Weg 217, 35392 Giessen (Germany)
- Publication Date:
- OSTI Identifier:
- 21015988
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review. A
- Additional Journal Information:
- Journal Volume: 76; Journal Issue: 3; Other Information: DOI: 10.1103/PhysRevA.76.032717; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1050-2947
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 74 ATOMIC AND MOLECULAR PHYSICS; CAPTURE; CATIONS; DIRAC EQUATION; ELECTRON-ATOM COLLISIONS; ELECTRON-ION COLLISIONS; ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; EV RANGE; EXCITATION; HARTREE-FOCK METHOD; HEAVY IONS; RECOMBINATION; RESONANCE; SILICON; STORAGE RINGS; TSR STORAGE RING
Citation Formats
Schmidt, E W, Bernhardt, D, Mueller, A, Schippers, S, Fritzsche, S, Hoffmann, J, Jaroshevich, A S, Krantz, C, Lestinsky, M, Orlov, D A, Wolf, A, Lukic, D, Savin, D W, Institut fuer Physik, Universitaet Kassel, Heinrich-Plett Strasse 40, 34132 Kassel, Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, 69117 Heidelberg, and Columbia Astrophysics Laboratory, Columbia University, 550 W. 120th St., MC 5247 New York, New York 10027. Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations. United States: N. p., 2007.
Web. doi:10.1103/PHYSREVA.76.032717.
Schmidt, E W, Bernhardt, D, Mueller, A, Schippers, S, Fritzsche, S, Hoffmann, J, Jaroshevich, A S, Krantz, C, Lestinsky, M, Orlov, D A, Wolf, A, Lukic, D, Savin, D W, Institut fuer Physik, Universitaet Kassel, Heinrich-Plett Strasse 40, 34132 Kassel, Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, 69117 Heidelberg, & Columbia Astrophysics Laboratory, Columbia University, 550 W. 120th St., MC 5247 New York, New York 10027. Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations. United States. https://doi.org/10.1103/PHYSREVA.76.032717
Schmidt, E W, Bernhardt, D, Mueller, A, Schippers, S, Fritzsche, S, Hoffmann, J, Jaroshevich, A S, Krantz, C, Lestinsky, M, Orlov, D A, Wolf, A, Lukic, D, Savin, D W, Institut fuer Physik, Universitaet Kassel, Heinrich-Plett Strasse 40, 34132 Kassel, Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, 69117 Heidelberg, and Columbia Astrophysics Laboratory, Columbia University, 550 W. 120th St., MC 5247 New York, New York 10027. 2007.
"Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations". United States. https://doi.org/10.1103/PHYSREVA.76.032717.
@article{osti_21015988,
title = {Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations},
author = {Schmidt, E W and Bernhardt, D and Mueller, A and Schippers, S and Fritzsche, S and Hoffmann, J and Jaroshevich, A S and Krantz, C and Lestinsky, M and Orlov, D A and Wolf, A and Lukic, D and Savin, D W and Institut fuer Physik, Universitaet Kassel, Heinrich-Plett Strasse 40, 34132 Kassel and Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, 69117 Heidelberg and Columbia Astrophysics Laboratory, Columbia University, 550 W. 120th St., MC 5247 New York, New York 10027},
abstractNote = {The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p{sup 6}nln{sup '}l{sup '} dielectronic recombination (DR) resonances associated with 3s{yields}nl core excitations, 2s2p{sup 6}3snln{sup '}l{sup '} resonances associated with 2s{yields}nl (n=3,4) core excitations, and 2p{sup 5}3snln{sup '}l{sup '} resonances associated with 2p{yields}nl (n=3,...,{infinity}) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s{yields}3pn{sup '}l{sup '} and 3s{yields}3dn{sup '}l{sup '}(both n{sup '}=3,...,6) and 2p{sup 5}3s3ln{sup '}l{sup '} (n{sup '}=3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.},
doi = {10.1103/PHYSREVA.76.032717},
url = {https://www.osti.gov/biblio/21015988},
journal = {Physical Review. A},
issn = {1050-2947},
number = 3,
volume = 76,
place = {United States},
year = {Sat Sep 15 00:00:00 EDT 2007},
month = {Sat Sep 15 00:00:00 EDT 2007}
}